Al doped ZnO thin film deposition by thermionic vacuum arc

Özgür, Mustafa; Pat, Şuat; Mohammadigharehbagh, Reza; Musaoğlu, Caner; Demirkol, Uğur; Elmas, Saliha; Özen, Soner; Korkmaz, Şadan

doi:10.1007/s10854-018-0329-x

Cited by 10 publications

(6 citation statements)

References 26 publications

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“…These results proved the eligibility of the TVA in the ionic radii of W 6+ (0.62Å) and B 3+ (0.2Å) [1]. Since this large difference between dopant and host atoms, i.e., tungsten and oxygen, the dopant tends to bond with oxygen [15,16] instead of aggregation in the grain boundary or being substituted into the tungsten location inside the WO 3 structure. The emerging B 2 O 3 was crystalline, and the origin of the extra peak that emerged in the thin film that was produced is not obviously understandable.…”

Section: Resultsmentioning

confidence: 52%

Boron–doped WO3 thin films prepared using thermionic vacuum arc technique: physical properties

Elmas

2024

Journal of Boron

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WO3 ince filmin fiziksel özelliklerinin iyileştirilmesi araştırmacılar arasında büyük ilgi görmektedir. Bu çalışmada, cam ve Silikon alttaşlar üzerine depolanan WO3 ince filmlerinin fiziksel özelliklerinin iyileştirilmesi için katkı maddesi olarak bor seçildi. Burada, farklı bor yüzdesine sahip filmlerin hazırlanmasında iyi bilinen plazma bazlı termiyonik vakum ark (TVA) tekniğinden yararlanılmıştır. Daha sonra, hazırlanan filmler uygun ölçüm cihazlarıyla karakterize edilir. Filmlerin pürüzlülüğü doğrudan bor miktarına ve alttaşların yapısına bağlıdır. Yapısal ölçüm, her iki alttaşta da WO3 fazlarının oluşumunu kanıtladı. Katkı miktarındaki artış, XRD desenlerindeki baskın tepe noktasında bir kaymaya neden olur. Filmlerin hesaplanan kristal boyutları 14 ila 49 nm arasında değişmektedir. Optik sonuçlara göre, WO3:B (%1) ve WO3:B (%3) filmlerinin optik bant aralığı (Eg) sırasıyla 3,23 ve 3,25 eV olarak elde edilmiştir. Borun artması filmlerin paketleme yoğunluğunun artmasına neden olur. Bu davranış alttaş özellikleriyle ilişkili değildir. Bu araştırma sonuçlarına bakıldığında, kristal boyutu ile daha düşük optik kayıp fonksiyonu arasında doğrudan bir ilişki vardır.

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Section: Resultsmentioning

confidence: 52%

Boron–doped WO3 thin films prepared using thermionic vacuum arc technique: physical properties

Elmas

2024

Journal of Boron

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“…As shown in Fig. 1 [6,9]. Additionally, the 1.33 AZO peak positions are slightly shifted to larger diffraction angles.…”

Section: Introductionmentioning

confidence: 70%

“…Moreover, the peak at 38.6°, 43.20° belong to (213), (402) of Al 2 O 3 (JCPDS Card No. 50‐1496) [6, 9]. Additionally, the 1.33 AZO peak positions are slightly shifted to larger diffraction angles.…”

Section: Resultsmentioning

confidence: 99%

Effect of oxygen deficiency on vis‐light photocatalytic activity in AZO

2019

Micro & Nano Letters

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Aluminium (Al)-doped zinc oxide (ZnO) photocatalyst with surface oxygen vacancies was synthesised by one-step hydrothermal method. The oxygen vacancies drawn into ZnO surface by Al doping can effectively enhance visible (vis)-light photocatalytic activity. The crystal structure, chemical composition and morphology of Al-doped ZnO (AZO) photocatalysts were characterised by X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy (TEM). The optical property was characterised by ultraviolet-vis diffuse reflectance spectra. High-resolution TEM and electron paramagnetic resonance spectra mainly confirm the existence of oxygen vacancies on the ZnO surface. Oxygen vacancies result in a narrowing of the bandgap (E g = 2.92 eV) and an increase in the vis-light absorption of the sample. AZO sample exhibits good cycling stability, and no obvious decrease in the photocatalytic activity was observed even after four cycles.

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“…Some of the most recent studies were also devoted to this type of semiconductor. In [191] the graphene-doped ZnO (ZnO:Gr) nanocomposite thin films on glass and Si substrates was studied. The Al-doped ZnO films deposited by TVA onto glass, semi-crystal PET, and single crystal Si substrates.…”

Section: Deposition Of the Semiconductorsmentioning

confidence: 99%

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

et al. 2020

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This review summarizes the more-than-25-years of development of the so-called thermionic vacuum arc (TVA). TVA is an anodic arc discharge in vapors of the material to be deposited; the energy for its melting is delivered by means of a focused electron beam. The resulting material ions fall at the substrate where they form a well-adhesive layer; the ion energy is controllable. The deposited layers are, as a rule, free from droplets typical for cathodic arc deposition systems and the thermal stress of the substrates being coated is low. TVA is especially suitable for processing refractory metals, e.g., carbon or tungsten, however, in the course of time, various useful applications of this system originated. They include layers for fusion application, hard coatings, low-friction coatings, biomedical-applicable films, materials for optoelectronics, and for solid-state batteries. Apart from the diagnostic of the film properties, also the diagnostic of the TVA discharge itself as well as of the by TVA generated plasma was performed. The research and application of the TVA proceeds in broad international collaboration. At present, the TVA technology has found its firm place among the different procedures for thin film deposition.

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Al doped ZnO thin film deposition by thermionic vacuum arc

Cited by 10 publications

References 26 publications

Boron–doped WO3 thin films prepared using thermionic vacuum arc technique: physical properties

Boron–doped WO3 thin films prepared using thermionic vacuum arc technique: physical properties

Effect of oxygen deficiency on vis‐light photocatalytic activity in AZO

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

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