Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallization

Abstract

Thin-film multilayer structures of a-Si/Al/a-Si and a-Si/Sb/a-Si were deposited by electron-beam evaporation. The microstructure and the electrical properties of as-deposited and annealed (T<1370 K) thin films were determined. A p-n junction was formed between polycrystalline silicon (poly-Si) doped with Sb and a p-type Si substrate. Al and Sb were found to induce crystallization of a-Si at 600 and 700 K, respectively. After annealing to 1370 K for 60 min, the resistivities 7.0×10−3 Ω cm for the Al-Si sample and 1.4×10−2 Ω cm for the Sb-Si sample were obtained. Passivation of poly-Si grain boundaries by Sb is proposed.

The Role of Au in the Thermoelectric Properties of Amorphous Ge/Au and Si/Au Thin Films

“…It has been reported that a metal used for MIC will precipitate at the Si grain boundaries after annealing. 15 Figure 3 shows the calculated grain size from Scherrer's equation for a Si (1 1 1) or Ge (1 1 1) plane. Scherrer's equation is…”

Thermal annealing of a-Si/Au superlattice thin films

“…The process is known as metal induced crystallization (MIC) which lowers the crystallization temperature of amorphous semiconductors [5,6]. It has reported that the mechanisms of MIC are by the formation of metal silicides and the formation of eutectic alloys or by the combination of the two processes [7].…”

Metal induced crystallization of amorphous silicon using layer-by-layer technique with gold ultra thin layer

“…Metal induced crystallization (MIC) of amorphous Si (a-Si) is a method for obtaining polycrystalline Si (poly-Si) of large grain sizes at low temperatures [1,2]. The effects caused by MIC of a-Si are widely studied and experimental knowledge has been accumulated [1][2][3][4].…”