Abstract:Alloying Al2O3 with Ga2O3 to form β-(Al
x
Ga1–x
)2O3 opens
the door to a large
number of new possibilities for the fabrication of devices with tunable
properties in many high-performance applications such as optoelectronics,
sensing systems, and high-power electronics. Often, the properties
of these devices are impacted by defects induced during the growth
process. In this work, we uncover the crystal structure of a β-(Al0.2Ga0.8)2O3/β-Ga2O3 interface grown by molecular beam epitaxy. In
particular, we determin… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.