Al composition dependent properties of quaternary AlInGaN Schottky diodes

Liu, Y.; Jiang, Hao; Egawa, Takashi; Zhang, B.; Ishikawa, Hiroyasu

doi:10.1063/1.2206609

Cited by 10 publications

(8 citation statements)

References 38 publications

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“…properties of InAlGaN/GaN heterostructures [6,7]. Recently, the quaternary InAlGaN-based heterostructure field-effect transistors (HFETs) have shown promising performance in the high-power, high-frequency field in comparison with AlGaN-based HFETs [8].…”

Section: Introductionmentioning

confidence: 99%

Al composition dependent structural and electrical properties of InAlGaN/GaN heterostructures

Nagarajan¹,

Kumar²,

Choi³

et al. 2007

J. Phys. D: Appl. Phys.

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InAlGaN/GaN heterostructures with various Al compositions have been grown on sapphire substrate using the metal organic chemical vapour deposition technique. The solid-to-gas phase ratio indicates a high Al incorporation efficiency. Atomic force microscopy reveals a smooth surface with the formation of hexagonal pits. The size and the density of the hexagonal pits increase with increasing Al mole fraction. The Hall effect and the capacitance–voltage (C–V) studies show the formation of a two-dimensional electron gas (2DEG) at the InAlGaN/GaN interface. A relatively higher Hall sheet carrier density compared with the 2DEG density estimated from the C–V profile indicates parallel conduction via the underlying GaN layer. It is observed that the 2DEG density decreases as a function of the Al composition and these results are discussed based on the increasing depth of the hexagonal pit and the background donor density.

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Section: Introductionmentioning

confidence: 99%

Al composition dependent structural and electrical properties of InAlGaN/GaN heterostructures

Nagarajan¹,

Kumar²,

Choi³

et al. 2007

J. Phys. D: Appl. Phys.

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“…Unfortunately, limited studies can be found about the currenttransport properties of Schottky contacts on the quaternary AlInGaN alloy in the literature. 19,36,37 Subramaniyam et al 36 interpreted the measured I-V characteristics of the (Ni/Au)-InAlGaN/GaN Schottky barrier diode in the temperature range of 295-473 K by using the GD of barrier heights. On the other hand, Laurent et al 19 published a study about the current-transport properties of the Ni Schottky contacts on the AlInGaN quaternary alloy.…”

Section: Introductionmentioning

confidence: 99%

Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy

Arslan

Altındal

Ural

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The current-conduction mechanisms of the as-deposited and annealed at 450°C (Ni/Pt) Schottky contacts on AlInGaN quaternary alloy have been investigated in the temperature range of 80-320 K. The zero-bias barrier height (BH) (Φ B0) and ideality factor (n) of them were evaluated using thermionic emission (TE) theory. The Φ B0 and n values calculated from the I-V characteristics show a strong temperature dependence. Such behavior of Φ B0 and n is attributed to Schottky barrier inhomogeneities. Therefore, both the Φ B0 vs n and Φ B0 vs q/2kT plots were drawn to obtain evidence on the Gaussian distribution (GD) of the barrier height at the metal/semiconductor interface. These plots show two different linear parts at low and intermediate temperatures for as-deposited and annealed Schottky contacts. Thus, the mean value of Φ B0 and standard deviation (σ 0) was calculated from the linear parts of the Φ B0 vs q/kT plots for both samples. The values of the effective Richardson constant (A Ã) and mean BH were obtained from the modified Richardson plots which included the effect of barrier inhomogeneity. These values of Richardson constant and barrier height for as-deposited contacts were found to be 19.9 A cm −2 K −2 and 0.59 eV, respectively, at low temperature, but 43.3 A cm −2 K −2 and 1.32 eV, respectively, at intermediate temperatures. These values of Richardson constant and barrier height for annealed contacts were found to be 19.6 A cm −2 K −2 and 0.37 eV, respectively, at low temperature, but 42.9 A cm −2 K −2 and 1.54 eV, respectively, at intermediate temperatures. It is clear that the value of the Richardson constant obtained for as-deposited and annealed samples by using double-GD for intermediate temperatures is close to the theoretical value of AlInGaN (=44.7 A cm −2 K −2). Therefore, I-V-T characteristics for the as-deposited and annealed Schottky contacts in the temperature range of 80-320 K can be successfully explained based on TE theory with double-GD of the BHs.

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“…Unfortunately, few studies can be found about the currenttransport properties of Schottky contacts on the quaternary AlInGaN alloy in the literature. [31][32][33] Although extensive studies on the annealing effect on the current-transport mechanisms of the Schottky contacts on GaN 16,18,[23][24][25][26][27][28][29] and AlGaN 18,19,27,30 have been performed, very little information is available concerning the annealing effect on the properties of Schottky contacts on the quaternary AlInGaN alloy. 34 The thermal annealing treatment effects on the Pt-Al 0.08 In 0.08 Ga 0.84 N Schottky contacts at various temperatures (300-600°C) have been reported by Ghazai et al 34 They conclude that high SBH and better surface morphology were obtained for Pt-Al 0.08 In 0.08 Ga 0.84 N Schottky contacts annealed at 400°C.…”

Section: Introductionmentioning

confidence: 99%

Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer

Arslan

Altındal

Ural

et al. 2018

Journal of Elec Materi

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contacts were placed on a quaternary Al 0.84 In 0.13 Ga 0.03 N epilayer. The electrical and structural properties of the asdeposited Pt/Au, Ni/Au, Ni/Pt/Au and annealed Ni/Pt/Au Schottky contacts were investigated as a function of annealing temperature using currentvoltage (I-V), capacitance-voltage (C-V), and high resolution x-ray diffraction measurements (HR-XRD). According to the I-V, Norde, and C-V methods, the highest Schottky barrier height (SBH) was obtained for the Pt/Au (0.82 eV (I-V), 0.83 eV (Norde), and 1.09 eV (C-V)) contacts when they were compared with the other as-deposited Schottky contacts. The estimated SBH of the annealed Ni/Pt/Au Schottky contacts, calculated from the I-V results, were 0.80 eV, 0.79 eV, and 0.78 eV at 300°C, 400°C, and 500°C, respectively. The SBH decreases with an increase in the annealing temperature up to 500°C compared with that of the as-deposited Ni/Pt/Au Schottky contact. The observed extra peaks in the annealed samples confirm the formation of a new interfacial phase at the interface. However, the diffraction patterns of the annealed Schottky contacts did not change as a function of the annealing temperature. The higher ideality factors values were obtained for as-deposited Pt/Au (5.69), Ni/Au (6.09), and Ni/Pt/Au (6.42) Schottky contacts and annealed Ni/Pt/Au (6.42) Schottky contacts at 300°C (6.89), 400°C (7.43), and 500°C (8.04). The higher n results can be attributed to current-transport mechanisms other than thermionic emission, such as dislocation related tunneling.

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Al composition dependent properties of quaternary AlInGaN Schottky diodes

Cited by 10 publications

References 38 publications

Al composition dependent structural and electrical properties of InAlGaN/GaN heterostructures

Al composition dependent structural and electrical properties of InAlGaN/GaN heterostructures

Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy

Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer

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