Al and Ge simultaneous oxidation using neutral beam post-oxidation for formation of gate stack structures

Abstract

To obtain a high-quality Germanium (Ge) metal–oxide–semiconductor structure, a Ge gate stacked structure was fabricated using neutral beam post-oxidation. After deposition of a 1-nm-thick Al metal film on a Ge substrate, simultaneous oxidation of Al and Ge was carried out at 300 °C, and a Ge oxide film with 29% GeO2 content was obtained by controlling the acceleration bias power of the neutral oxygen beam. In addition, the fabricated AlOx/GeOx/Ge structure achieved a low interface state density of less than 1 × 1011 cm−2 eV−1 near the midgap.

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

“…Details of the apparatus of the NBO system have been described in our previous reports. [27][28][29] Aluminum-doped ZnO (AZO) top electrodes were patterned using a shadow mask with a diameter of 150 µm; the AZO was deposited in Ar ambient to achieve highly oxygen deficient conducting films. All fabrication processes were conducted at room temperature.…”

Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

“…In fact, surface oxidation using the O beam can be applied for the formation of silicon (Si) oxide, [12][13][14][15] germanium oxide, 16,17) gallium arsenide oxide 18) and aluminum oxide. 19) In addition, the formation of a tantalum oxide film and improvement of a ZnO film characteristic were reported to obtain high-quality metallic oxide films as an ionic transport layer, which was applied for the fabrication of RRAM devices, resulting in the typical bipolar resistive switching. [20][21][22][23] In this study, we investigate the effect of surface treatment by O beam on the ZnO film, and the electrical characteristics of ZnO-based RRAM where different treatment time of O beam was used.…”

Ta2O5-based redox memory formed by neutral beam oxidation

“…Actually, this oxidation process can be applied for the formation of silicon (Si) oxide, [21][22][23][24] germanium oxide, 25,26) gallium arsenide oxide 27) and aluminum oxide. 28) Recently, neutral beam oxidation using a tantalum (Ta) metal film was reported to obtain a Ta 2 O 5 film as an ionic transport layer, which was applied for the fabrication of a redox-based memory device, resulting in the typical bipolar resistive switching. 29) In this study, we present the film density and oxidation thickness of Ta 2 O 5 formed by a neutral oxygen beam, and the electrical characteristics of Ta 2 O 5 -based redox memory where different thicknesses of Ta metal film were used during the neutral beam oxidation process.…”