Al
                  2
                O
                  3
           prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)

Gao, Kun; Seyller, Thomas; Ley, L.; Ciobanu, Florin; Pensl, Gerhard; Tadich, Anton; Riley, J.D.; Leckey, Robert

doi:10.1063/1.1609053

Cited by 100 publications

(54 citation statements)

References 14 publications

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“…We first calculate the band gaps of models I and II at the hybrid functional level finding 6.67 and 6.31 eV, respectively, in accord with measured values, which range from 6.1 to 7.0 eV. 5,[36][37][38][39][40][41][42][43] For the line-up with respect to InGaAs, we then use a model of the GaAs/Al 2 O 3 interface generated previously 20 and rely on the experimental result that the valence band of InGaAs occurs at essentially the same po- sition as that of GaAs. 43 Using the experimental value of the band gap of InGaAs, 44 we obtain the band alignment shown in Fig.…”

Section: -35mentioning

confidence: 96%

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

Colleoni

Pourtois

Pasquarello

2017

Applied Physics Letters

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In and Ga impurities substitutional to Al in the oxide layer resulting from diffusion out of the substrate are identified as candidates for electron traps under inversion at In 0.53 Ga 0.47 As/Al 2 O 3 interfaces. Through density-functional calculations, these defects are found to be thermodynamically stable in amorphous Al 2 O 3 and to be able to capture two electrons in a dangling bond upon breaking bonds with neighboring O atoms. Through a band alignment based on hybrid functional calculations, it is inferred that the corresponding defect levels lie at ∼1 eV above the conduction band minimum of In 0.53 Ga 0.47 As, in agreement with measured defect densities. These results support the technological importance of avoiding cation diffusion into the oxide layer.The microelectronic industry is investigating high mobility semiconductors for replacing silicon as substrate material. Among the III-V compounds, the In x Ga 1−x As family has gathered large interest for application in n-type devices.1 In particular, the compound In 0.53 Ga 0.47 As (here referred to as InGaAs) has suitable electronic properties for microelectronic devices and can easily be grown onto InP substrates.1,2 Amorphous Al 2 O 3 is the preferred dielectric owing to its wide bandgap, high breakdown field, and high thermal stability. 2Several passivation procedures have been considered to reduce the high density of interfacial defect states occurring at III-V/oxide interfaces (D it ).3-7 The origin of these states has been for long debated and recently assigned to As-As dimer bonds. [8][9][10][11][12][13] In addition to these interfacial states, a high density of oxide traps (D ot ) has recently been detected in the oxide layer of metal-oxide-semiconductor (MOS) devices. Capacitancevoltage (CV) measurements show a bimodal distribution for the density of defect states in the oxide, 14 with one peak at 1.5 eV above and the other at 0.5 eV below the CBM of InGaAs. Similarly, through positive bias temperature instability (PBTI) experiments, a wide distribution of defect states centered at about 1 eV above the InGaAs conduction band maximum (CBM) has been inferred.15 These states are considered to be at the origin of the degradation of the electrical properties, thereby compromising the performance of the corresponding MOS devices.14,15 Indeed, upon reaching the inversion of carrier population, the Fermi energy is pushed deep into the conduction band of InGaAs in order to achieve high carrier concentrations, and is then susceptible to defects in the upper part of the oxide band gap. The atomic origin of these defects has remained elusive. A hint might come from electrical measurements on InGaAs/Al 2 O 3 and Ge/GeO x /Al 2 O 3 interfaces which yield similar field acceleration factors, 16 but an assessment concerning the nature of the involved defects remains out of reach on this basis. More indicatively, a) Electronic mail: davide.colleoni@epfl.ch time-of-flight secondary ion mass spectroscopy studies on GaAs/Al 2 O 3 and InGaAs/Al 2 O 3 interfaces revea...

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Section: -35mentioning

confidence: 96%

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

Colleoni

Pourtois

Pasquarello

2017

Applied Physics Letters

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“…The main objective of synthesis is to produce particles only in nanorod structure for various toxicity and biological application studies. There are different doping agents like P [27], N [28], As [29], Li [30], Sb [31][32][33][34], and Ag [35]. Among these, we have taken Ag as doping agent.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Silver-Doped Zinc Oxide Nanocomposite by Pulse Mode Ultrasonication and Its Characterization Studies

Vijayakumar

Karthikeyeni

Vasanth

et al. 2013

Journal of Nanoscience

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The synthesis of silver-doped zinc oxide (Ag:ZnO) nanocomposite material was achieved using a simple chemical coprecipitation method, in which 0.2 M zinc chloride and 0.001 M silver nitrate coprecipitated with 25% ammonia solution by pulse mode dispersion using ultrasonicator. The obtained silvery white precipitate was dried overnight at 110 ∘ C in hot air oven, and the powder was collected. The resulted Ag:ZnO nanocomposite was structurally and optically characterized using various techniques. The Xray diffraction (XRD) pattern clearly showed the presence of crystalline Ag:ZnO particles. Further, UV-Vis spectrophotometer and fourier transform infrared spectroscopy (FT-IR) results showed the presence of Ag:ZnO nanocomposite at specific wavelengths. The scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis confirm that the synthesized Ag:ZnO nanocomposite material was truncated nanorod in shape and has 48 to 226 nm size in diameter.

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“…4 . With the process parameters set for a specific ALD process, the amount of materials supplied, deposited, and emitted can be calculated by applying stoichiometric principles on the ALD chemical reactions.…”

Section: Process Characterizationmentioning

confidence: 99%

“…The high-k dielectric Al 2 O 3 film is a promising candidate to replace conventional SiO 2 gate insulators on semiconductor devices. By using ALD technology, the accuracy of Al 2 O 3 film thickness can be successfully controlled at 0.1 ± 0.01 nm scale [4], while the roughness of the growing surface can be managed less than 0.3 nm [5].…”

Section: Introductionmentioning

confidence: 99%

Environmental performance characterization of atomic layer deposition

Yuan

Dornfeld

2008

2008 IEEE International Symposium on Electronics and the Environment

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Abstract-Atomic Layer Deposition (ALD) is emerging as a promising nanotechnology for manufacturing dielectrics and insulators on microelectronics devices. Its environmental performance has to be characterized at this early development stage to achieve sustainable manufacturing in the future. In this paper, we report our environmental performance characterization studies on ALD technology through material flow analysis and energy flow analysis. The assessed ALD process is for deposition of Al 2 O 3 high-k dielectric films on a 4 inch silicon wafer. The results show that only 50.4% of input Trimethyl Aluminum (TMA) material is turned into Al 2 O 3 film, while the other half is transformed into toxic emissions into the environment. Material usage efficiency of water is only 2.03% in current ALD processes. ALD is also featured with intensive energy consumption. For the studied ALD process, a total of 4.09 MJ energy is consumed for deposition of a 30 nm Al 2 O 3 film, with averaged energy consumption at 13.6 KJ per cycle.

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Al 2 O 3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)

Cited by 100 publications

References 14 publications

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

Synthesis of Silver-Doped Zinc Oxide Nanocomposite by Pulse Mode Ultrasonication and Its Characterization Studies

Environmental performance characterization of atomic layer deposition

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