Al 0.15 Ga 0.85 N ∕ Ga N high electron mobility transistor structures grown on p-type Si substrates

Abstract

We report on experimental studies of Al0.15Ga0.85N∕GaN high electron mobility transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultrathin SiN layer during the crystal growth, the Hall mobility of the HEMT structure can be greatly enhanced (greater than three times). This SiN treatment technique also allows the observation of Shubnikov–de Haas oscillations which is not possible in the untreated HEMT structure. Our experimental results pave the way for the integration of AlxGa1−xN∕GaN HEMT structures with the mature Si technology in industry.

The effect of pre-aging on the electromigration of flip-chip SnAg solder joints

“…1,6 Three-dimensional simulation has been carried out to depict the current density distribution in solder bumps and a hot spot was proposed to occur at the region of current crowding. 7,8 The current crowding induced by electromigration still plays a crucial role in the failure of the bumps. Recently, due to environmental concerns, studies have been conducted on the electromigration of lead-free solder bumps.…”

Correlation Field Analysis of Magnetoresistance of GaN/AlGaN Heterostructure Grown on Si Substrate

“…11,12) Recently, it has been shown that by introducing an ultrathin SiN x film during crystal growth, the Hall mobility of a GaN/Al 0:15 -Ga 0:85 N heterostructure on Si could be markedly increased (>3 times). [13][14][15] These GaN/Al 0:15 Ga 0:85 N heterostructures grown on Si are compatible with complementary metaloxide-semiconductor technology and have promising device applications, making it useful in understanding the fundamental physics of these heterostructures.…”

Electron heating in Al0.15Ga0.85N/GaN heterostructures grown on p-type Si

“…Recently GaN/AlGaN heterostructures have attracted much interest because of their application in electrical, light-emitting devices, and high-electron-mobility transistors (HEMTs) [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The electronic properties of a GaNbased device are governed by the two-dimensional electron system (2DES) formed in the GaN/AlGaN quantum well.…”