Air-voids embedded high efficiency InGaN-light emitting diode

Park, Eun-Hyun; Jang, Jin; Gupta, Shalini; Ferguson, Ian T.; Kim, Cheol-Hoi; Jeon, Soo-Kun; Park, Joong-Seo

doi:10.1063/1.2998596

Cited by 77 publications

(43 citation statements)

References 7 publications

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“…2(d), we can estimate the average diameter of these air voids is about 100 nm. These embedded air voids shall be able to increase the LEE due to extra light scattering from these air bubbles [25].…”

Section: Resultsmentioning

confidence: 99%

Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates

Chiu

Lin

et al. 2011

IEEE J. Select. Topics Quantum Electron.

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Section: Resultsmentioning

confidence: 99%

Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates

Chiu

Lin

et al. 2011

IEEE J. Select. Topics Quantum Electron.

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“…Patterned sapphire substrates (PSSs) 23 or roughening in vertical LEDs (VLEDs) achieve light extraction efficiencies of over 80% today. 24,25 Methods are still under investigation to reduce TIR by surface roughening, 26 substrate patterning, chip shape optimization, and material integrating/embedding. 2 The internal quantum efficiency (IQE), the ratio of generated photons to the electron-hole recombination, was increased by improving the material quality and modification to to LED device structures.…”

Section: The Iii-nitrides For Light-emitting Diodesmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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“…It is known that most researchers have successfully simulated light extraction in LEDs using the ray-tracing method when they considered LEDs with mixed structure sizes, i.e. some micron-sized structures and some submicron-sized, like our LEDs [14,16,17,19,20], even though they used a strict method such as the finitedifference time-domain (FDTD) method when they considered LEDs with entirely nanoscale structures. The validity for such a use of the ray-tracing method can be explained: The key point in the phenomenon of light extraction with PSSLEDs is the breaking of TIR, so that the light's nature as a ray is more conspicuously considered than as a wave.…”

Section: Resultsmentioning

confidence: 99%

“…Monte Carlo ray-tracing simulations are one of the most [15][16][17][18]. Geometrical optical phenomena in photonic devices can be analyzed using this method, including ray scattering, absorption and transmission in the semiconductor layers, Fresnel losses of the media due to different refractive indices, and the randomly emitted light from the active region of an LED [19].…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulations of the Light-Extraction Efficiency of LEDs on Sapphire Substrates Patterned with Various Polygonal Pyramids

Cui

Park

2014

Journal of the Optical Society of Korea

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We report a numerical analysis of the light-extraction efficiency (LEE) of light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs). We considered various n-sided, regular convex pyramids, where n is an integer and n ≥ 3. We then considered four cross sections: extruded, subtracted, truncated-extruded, and truncated-subtracted. Ray-tracing simulations were carried out with these polygonal pyramid patterns, and the dimensions of the patterns were systematically varied. Optimized pattern shapes were determined for large LEE. An extruded circular pyramid with a slant angle of 45° was found to be the optimal patterned shape.

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Air-voids embedded high efficiency InGaN-light emitting diode

Cited by 77 publications

References 7 publications

Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates

Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates

Review—The Current and Emerging Applications of the III-Nitrides

Numerical Simulations of the Light-Extraction Efficiency of LEDs on Sapphire Substrates Patterned with Various Polygonal Pyramids

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