Air‐Stable Solution‐Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm² V⁻¹ s⁻¹

Abstract

An alternative approach for the development of high‐performance unipolar and ambipolar thin‐film transistors and integrated circuits based on hybrid heterostructures comprising a phase‐separated solution processed p‐type organic small‐molecule:polymer semicondcutor blend and a spray‐coated n‐type ZnO semiconductor layer is demonstrated.

High performance CMOS-like inverter based on an ambipolar organic semiconductor and low cost metals

“…For inverters using Cu electrodes, the observed voltage gain (∼90) is slightly lower than those using Au or Ag electrodes, but is still better than most reported CMOS-like inverters based on organic ambipolar materials. 2,22,23 The exact factors cause the lower gain values of Cu devices are not well understood. The less balanced hole and electron mobilities and possible oxidation to the Cu electrode are likely to be the reasons.…”

“…Previous reports on devices using unmodified electrodes tended to give low noise margin. 23,25,26 In Fig. 4, the high and low noise margins (NM H and NM L ) extracted from the voltage transfer characteristics of all these inverters using different metal electrodes are displayed and compared with the theoretical values.…”

Versatile Organic Transistors by Solution Processing

“…[92] Another approach has been based on coplanar bisphthalocyaninato copper: [93] Shi et al designed and synthesized a copper complex with energy levels tuned to the range of an air-stable ambipolar OSC in a single material and fabricated OFETs by using a quasi-Langmuir-Shäfer process for thin-film deposition, achieving electron and hole mobilities of 1.7 10 À1 and 2.3 10…”

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

“…[15][16][17][18] To address this issue, significant efforts have been made to develop hybrid complementary circuits by combining p-channel organic TFTs with n-channel metal oxide TFTs. [19][20][21][22] However, the vast majority of the hybrid circuits demonstrated to date rely on costly vacuumbased processing techniques such as sputtering, 19,20,23 ALD, 24 and/or required high temperature processing that is incompatible with inexpensive flexible substrate materials such as plastic. 25,26 Although significant progress towards plasticcompatible, solution-processed hybrid logic has been achieved in the recent years, these circuits show moderate performance primarily due to the large imbalance in the hole and electron mobilities.…”

“…The S-D electrodes were deposited via thermal evaporation of a 10 nm-thick layer of Al, acting as the adhesion and electron injecting layer for the metal oxide channel, and a 30 nm-thick hole injecting Au layer, followed by the deposition of the electrode work function modifying self-assembling molecule 2,3,4,5,6-Pentafluorothiophenol (PFBT). 22 Circuit fabrication was completed with the deposition of the ternary C 8 -BTBT:C 16 IDT-BT:C 60 F 48 (1%) blend, 900 nm thick CYTOP gate dielectric and the top Al gate electrode. The film microstructures were studied by high-resolution transmission electron microscopy (HRTEM).…”