2008
DOI: 10.1021/ja803291a
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Air-assisted High-performance Field-effect Transistor with Thin Films of Picene

Abstract: A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, mu, of 1.1 cm2 V-1 s-1 and the on-off ratio of >10(5). This excellent device performance was realized under atmospheric conditions. The mu increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assis… Show more

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Cited by 229 publications
(233 citation statements)
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“…In the tight-binding approximation, the effective mass of the hole m h * can be given by m h * = 2 /2tb 2 , while our results gives m h * = 2.24 m 0 (m 0 : the free electron mass). In a broad band model (W > k B T ), the hole mobility µ h can be estimated as µ h ≥ 20 (m 0 /m * ) × (300/T ) [22], so that the lower limit of µ h is 9.0 cm 2 /Vs at 298 K. This value is comparable to the largest µ h (∼5 cm 2 /Vs) of reported picene thin film transistors [7,8], and suggests that the hole mobility in the thin films is dominated by the band transport [7,8,14,23].…”
Section: Fig 3: (A)mentioning
confidence: 79%
“…In the tight-binding approximation, the effective mass of the hole m h * can be given by m h * = 2 /2tb 2 , while our results gives m h * = 2.24 m 0 (m 0 : the free electron mass). In a broad band model (W > k B T ), the hole mobility µ h can be estimated as µ h ≥ 20 (m 0 /m * ) × (300/T ) [22], so that the lower limit of µ h is 9.0 cm 2 /Vs at 298 K. This value is comparable to the largest µ h (∼5 cm 2 /Vs) of reported picene thin film transistors [7,8], and suggests that the hole mobility in the thin films is dominated by the band transport [7,8,14,23].…”
Section: Fig 3: (A)mentioning
confidence: 79%
“…The details of the procedure are described in a literature. 7 Pristine picene thin films for the measurements at Hiroshima Synchrotron Radiation Center ͑HiSOR͒ were prepared by in situ deposition of picene powder on Au-coated stainless substrates under ultrahigh vacuum. X-ray diffraction of the solid pristine picene films showed that they have the same crystal structure as that of solid picene.…”
Section: Methodsmentioning
confidence: 99%
“…3. This binding energy of the valence band maximum is nearly half of the band gap, 7 suggesting that solid pristine picene is an intrinsic semiconductor. We also observed no intensity at E F , consistent with semiconducting properties of pristine picene.…”
Section: Calcmentioning
confidence: 99%
“…A picene molecule consists of five benzene rings joined in an armchair manner with a higher chemical stability than pentacene with a straight arrangement. The solid picene has in fact a much larger band gap (' 3:3 eV) 9) than that of solid pentacene (' 1:8 eV), which is why the material originally attracted attention as an organic semiconductor in e.g. organic FET's.…”
mentioning
confidence: 99%
“…organic FET's. 9,10) Picene has been known to crystallize in orthorhombic and monoclinic forms, 11) and Kubozono's group discovered superconductivity in potassium-doped monoclinic crystalline picene. 8) The crystal comprises layers stacked in c direction, where each layer (in ab plane) has picene molecules arranged in a herringbone structure.…”
mentioning
confidence: 99%