AIN heteroepitaxial and oriented films grown on (111), (110) and (100) natural diamond faces

Спицын, Б. В.; Hsu, W.L.; Gorodetsky, А.Е.; Залавутдинов, Р. Х.; Захаров, А.П.; Bouilov, L.L.; Stoyan, V.P.; Dvoryankin, V. F.; Chaplygin, G.V.

doi:10.1016/s0925-9635(97)00215-x

Cited by 15 publications

(8 citation statements)

References 3 publications

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“…12 Similar problems can be identified in other reports, such as in the MOCVD growth of GaN on nanocrystalline and (110) oriented diamond substrates, 11,13 for the c-oriented AlN deposition on various diamond faces 17,18 and the closely related GaN and AlN growth on silicon substrates. 19,20 To overcome this problem of slow lateral growth rate, the influence of several major parameters in GaN growth, like reactor pressure, precursor flow, growth temperature, and substrate misorientation, on the growth rate are investigated.…”

Section: Introductionsupporting

confidence: 65%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition. From the influence of pressure, V/III ratio, and temperature, it was deduced that the growth process is determined by the mass-transport of gallium precursor material toward the substrate. The highest temperature yielded an improved epitaxial relationship between grown layer and substrate. X ray diffraction (XRD) pole figure analysis established the presence of two domains of epitaxial layers, namely (0001) h10 10i GaN k (001) [110] diamond and (0001) h10 10i GaN k (001) ½1 10 diamond, which are 90 rotated with respect to each other. The presence of these domains is explained by the occurrence of areas of (2 Â 1) and (1 Â 2) surface reconstruction of the diamond substrate. When applying highly misoriented diamond substrates toward the [110] diamond direction, one of the growth domains is suppressed and highly epitaxial GaN on (001) diamond is realized.

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Section: Introductionsupporting

confidence: 65%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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“…Until now, AlN layers have been grown on diamond substrates by various techniques such as chemical beam epitaxy [8], chemical vapor deposition [9], molecular beam epitaxy (MBE) [10], and metal-organic vapor phase epitaxy (MOVPE) [11,12]. Polycrystalline and/or textured AlN layers were generally grown on (0 0 1) diamond substrates.…”

Section: Introductionmentioning

confidence: 99%

Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy

Imura

Nakajima

Liao

et al. 2010

Journal of Crystal Growth

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a b s t r a c tWurtzite AlN layers are grown on a (0 0 1) diamond substrate by metal-organic vapor phase epitaxy. The microstructure and growth mechanism of the AlN layer are examined using atomic force microscopy, X-ray diffractometry, and transmission electron microscopy. At the initial stage of AlN growth, AlN crystalline particles with various orientations are randomly nucleated on the (0 0 1) diamond surface. At the second step of growth, AlN grains predominantly oriented along the c-axis grow, incorporate the randomly oriented AlN grains, and then grow further. At the final step of growth, a continuous AlN layer with a c-axis-oriented two-domain structure is obtained on the (0 0 1) diamond substrate. Microstructural analysis reveals that either the /1120S AlN domain or /1010S AlN domain is aligned on the [1 1 0] diamond direction. The growth mechanism governs by the higher growth rate of the AlN grains along the [0 0 0 1] direction than along other directions at high growth temperatures up to 1270 1C.

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“…Until now, the AlN layer has been grown on diamond substrates by various techniques of chemical beam epitaxy [8], chemical vapor deposition [9], molecular beam epitaxy [10], and metal-organic vapor phase epitaxy (MOVPE) [11,12]. Polycrystalline and/or textured AlN layers were generally grown on (0 0 1) diamond substrates.…”

Section: Introductionmentioning

confidence: 99%

“…Polycrystalline and/or textured AlN layers were generally grown on (0 0 1) diamond substrates. The predominant orientations were (0 0 0 1)/11 2 0SAlN J (0 0 1)[11 0]diamond, (0 0 0 1)/10 1 0SAlN J (0 0 1)[11 0]diamond, and randomly rotated {1 0 1 1}AlN J (0 0 1) diamond [9,13]. In contrast, an AlN layer with a two-domain structure was grown on a (111) diamond substrate.…”

Section: Introductionmentioning

confidence: 99%