AIIIBV heterostructure simulation and investigation

J. Nano- Electron. Phys.

Legotin³

et al. 2016

GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV-visible wavelength range. Most of experimental and theoretical work in this area has been focused so far on Schottky diode and p-in structures for solar blind applications. However, it seems that bipolar phototransistors with their additional functionality could also be of potential interest. In this work we present the results of phototransistors parameters simulation using the software-Sim Windows. The structure analyzed consisted, counting from the substrate, of n-AlxGa1-xN collector, p-GaN base and n-AlxGa1-xN emitter. The Al mole fraction in the collector and emitter was varied from x  0.2 to x  0.3. The collector and emitter thickness was taken as 0.9 m. The doping level in the emitter and collector was varied from 10 17 to 10 19 cm-3. The p-GaN base thickness was taken as 0.3 m, with doping of 10 17-10 18 cm-3. The electron and hole lifetimes in the base were taken as 12 ns.

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

AlGaN Heterostructure Optimization for Photodetectors

Didenko¹,

J. Nano- Electron. Phys.

Legotin³

et al. 2016

“…Our investigations based on computer simulation showed that, based on such NH, not only photodiodes but also phototransistors (PT) with a sensitivity of more than 100 A/cm 2 can be produced, in this wavelengths area [35][36][37][38][39][40][41][42][43]. Ultraviolet phototransistor (UV PT) structure has been proposed, based on the capabilities of this technology with GaN and AlGaN collector.…”

Section: Photodetector (Phototransistor) Improvementsmentioning

confidence: 99%

LED and Phototransistor Simulation

Yurchuk¹,

Optoelectronics - Advanced Device Structures

Didenko³

2017

Optoelectronics (e.g., light-emitting diodes, photodetectors) is one of the most widely used fields nowadays. But it is still necessary to improve their characteristics for using in general lighting. In this chapter, the heterostructure conductivity type, impurity and indium atoms influence on the LEDs and phototransistor characteristics are investigated by computer simulation. It was found that current-voltage characteristic and quantum efficiency depend on impurity and indium atoms change a lot. By varying impurity and indium atom concentration, controlling their distribution in InGaN and AlGaP heterostructure LEDs and photodetector characteristics can be improved.

“…based on different materials: Si, Ge, A III B V , A II B VI and etc. ; 3) the device simulation possibility with the structures containing plenty of layers including layers with quantum-mechanical properties (single and multiple quantum wells) [1][2][3][4][5]. The program has an exclusive flexibility at optoelectronic semiconductor device simulation.…”

Section: Introductionmentioning

confidence: 99%

InAlGaP Heterostructures and LEDs optimization

Didenko¹,

Legotin³

et al. 2016

MSF

Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a heterostructure having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel. Good correlation in simulation and experimental results has been obtained. It was determined that the best AlGaInP heterostructure contains 5 wide QW (width 10 nm each) in active region. The main thing is that in central ones there is maximum radiation and at the both ends of active region are “barriers” which help to concentrate electrons/holes in active region and additionally “protect” QW from different defects.