Aids for the Quadriplegic

Af, Blake; Da, Blake

doi:10.1093/ptj/37.1.38

Search citation statements

Order By: Relevance

Paper Sections

Select...

Normally-off Operation1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2013

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The final approach to normally-off operation illustrated in Table I is a cascode connection using a high-voltage normally-on GaN HEMT and a lowvoltage normally-off Si-MOSFET [15]. In this configuration, the source of the Si-MOSFET is connected to the gate of the GaN HEMT.…”

Section: Normally-off Operationmentioning

confidence: 99%

Current status of GaN power devices

Kachi

2013

IEICE Electron. Express

View full text Add to dashboard Cite

Abstract:The performance of GaN power devices has been rapidly improving. Recently, the main approach is the use of AlGaN/GaN HEMT structures on Si substrates, for which the target breakdown voltage is initially 600 V or less. Although issues still remain with regard to current collapse and the threshold voltage required for normallyoff operation, many companies have announced their intention to commercialize such devices. In this report, recent developments concerning GaN power devices are reviewed, and unresolved issues and future expectations are discussed.

show abstract

Section: Normally-off Operationmentioning

confidence: 99%

Current status of GaN power devices

Kachi

2013

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

Aids for the Quadriplegic

Cited by 1 publication

References 0 publications

Current status of GaN power devices

Current status of GaN power devices

Contact Info

Product

Resources

About