AgInSbTe memristor with gradual resistance tuning

Abstract

A chalcogenide material with Ag/Ag5In5Sb60Te30/Ag structure was proposed as a memristor. Reproducible gradual resistance tuning in bipolar/unipolar modes was demonstrated. The resistance variation was tuned more precisely by controlling the polarity, the amplitude, the width, and the number of applied voltage pulses. The bipolar memristive switch was attributed to the coexistence of intrinsic space charge limited conduction and extrinsic electrochemical metallization effect. Moreover, the unipolar gradual resistance tuning reconfirmed the electrochemical metallization effect. The gradual resistance tuning characteristics will promote this memristor to potential application in mimicking biological plastic synapses.

AHaH Computing–From Metastable Switches to Attractors to Machine Learning

“…The devices include the Ag-chalcogenide [55], AIST [99], GST [70], and WO x [63] devices, and they represent a wide spectrum of incremental memristive devices found in recent publications exhibiting diverse characteristics. All simulations in this paper involving AHaH node circuitry use the memristor model parameters of the Ag-chalcogenide device, unless otherwise noted.…”

The bipolar and unipolar reversible behavior on the forgetting memristor model

“…However, the bipolar and the unipolar memristors are not absolutely independent. In [8], [9], [10], both the unipolar and the bipolar behaviors are captured in a single memristor cell, e.g., Ag/Ag 5 In 5 Sb 60 Te 30 /Ag [8], Pt/TiO 2 /Pt [9], Au/SrTiO 3 /Pt [10]. In [11], the bipolar and the unipolar behaviors are natural reversible in a Ti/SrTiOx/Pt cell.…”

Reconfigurable Memristive Device Technologies

“…Ion conducting devices have been studied in such applications as neural networks [103] and computing [104], and in threshold logic [105]. The active layer has very often been a chalcogenide, such as As x S y [106], AgInSbTe [107], or Ge x Se y , or Ge x S y [108], [109]. Chalcogenide ion-conducting devices have been typically fabricated by either depositing a ternary material (e.g., Ge-S-Ag) to a desired stoichiometry [110], or by photodoping and/or thermally annealing the Ag or Cu metal into the active amorphous material matrix [111].…”