Agglomeration and percolation conductivity

Sieradzki, Karl; Bailey, Kathleen A.; Alford, Terry

doi:10.1063/1.1419043

Cited by 79 publications

(55 citation statements)

References 11 publications

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“…Silver was selected as a potential interconnect material, for its low bulk electric resistivity 17,18 ; hence, the resistivity of the Cu alloy remains low once the silver nitrite has dissociated during annealing at high temperatures. Sieradzki et al 19 report that the resistance of a silver thin film deposited on an SiO 2 substrate is a function of the annealing time.…”

Section: Introductionmentioning

confidence: 99%

Copper-Silver Alloy for Advanced Barrierless Metallization

Lin

Leau

2009

Journal of Elec Materi

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In this study we observed significantly improved properties, over a pure copper (Cu) film, for a copper-silver alloy film made with a pure copper film co-sputtered with a minute amount of either Ag 0.3 N 0.4 or Ag 1.2 N 0.7 on a barrierless Si substrate. In either case, no noticeable interaction between the film and the Si substrate was found after annealing at 600°C for 1 h. The Cu(Ag 0.3 ,N 0.4 ) film was thermally stable after annealing at 400°C for 240 h. The film's resistivity was $2.2 lX cm after annealing at 600°C, while its leakage current was found to be lower than that of a pure Cu film by three orders of magnitude. The adhesion of the Cu(Ag 1.2 ,N 0.7 ) film to the Si substrate was approximately seven times that of a pure Cu film to a silicon substrate. Hence, a Cu film doped with Ag and N seems to be a better candidate for both barrierless metallization and the making of superior interconnects.

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Section: Introductionmentioning

confidence: 99%

Copper-Silver Alloy for Advanced Barrierless Metallization

Lin

Leau

2009

Journal of Elec Materi

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“…An rapid increase in the resistivity was observed from 35 min to 60 min, as the result of the isolation of agglomerated copper islands. In the case of Ag film, Sieradzki et al 18) reported that the sheet resistance of Ag(100 nm)/SiO 2 (150 nm)/Si(100) structure had no change even after annealing for 50 hr at 858 K (¼ 585 C) in vacuum, which indicates that the diffusion of copper is faster than silver. Figure 5 shows X-ray diffraction patterns of the samples at various annealing time.…”

Section: Resultsmentioning

confidence: 99%

Agglomeration of Copper Thin Film in Cu/Ta/Si Structure

et al. 2004

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Copper agglomeration in Cu(100 nm)/Ta(50 nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650 C for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.

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“…Generally, the context for the theoretical explanations is that the patterns result from film instability during the fabrication process [39][40][41][42][43][44][45]. With this background, the theoretical basis can be described as follows.…”

Section: Chemical Vapor Exposure For Patterning Of Thin Filmsmentioning

confidence: 99%

“…With this background, the theoretical basis can be described as follows. There are five stages in the constant progression from the original film (stage (1)) to the final island structure (stage (5)) [39][40][41][42][43][44][45] during stage (2), hillocks form as a result of Top: Pressure applied through rubber band. Second: Pressure through multiple rubber bands.…”

Section: Chemical Vapor Exposure For Patterning Of Thin Filmsmentioning

confidence: 99%

Development of Patterns for Digital Image Correlation Measurements at Reduced Length Scales

et al. 2006

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Methods for patterning metal thin films at the microscale and nanoscale by applying the patterns to metallic and polymeric materials for use in shape and deformation measurements in a scanning electron microsope (SEM) or other high magnification imaging system are described. In one approach, thin films of metallic materials (e.g., Au, Ag, Cu, and Cr) are applied to a variety of substrates. The coated samples are then placed into a reaction vessel, where the specimens are heated and exposed to a nitrogen atmosphere saturated with selected volatile chemicals. This process results in nano-scale remodeling of the metallic films, thereby affording high contrast random patterns with different morphologies. In a second approach, thin films of metallic materials, including gold and silver, also have been applied using a simplified UV photolithographic method requiring a minimum amount of laboratory preparation. Using selected substrates, both methods have been used successfully to transfer patterns onto polymeric and metallic materials ranging from 50-500 nanometers with chemical vapor rearrangement and 2 to 20 microns with UV photolithography, providing a pattern that can be used with digital image correlation to quantify both the surface profile and also surface deformations at reduced length scales.

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Agglomeration and percolation conductivity

Cited by 79 publications

References 11 publications

Copper-Silver Alloy for Advanced Barrierless Metallization

Copper-Silver Alloy for Advanced Barrierless Metallization

Agglomeration of Copper Thin Film in Cu/Ta/Si Structure

Development of Patterns for Digital Image Correlation Measurements at Reduced Length Scales

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