2020
DOI: 10.1021/acs.chemmater.0c01971
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AGa3F6(SeO3)2 (A = Rb, Cs): A New Type of Phase-Matchable Hexagonal Tungsten Oxide Material with Strong Second-Harmonic Generation Responses

Abstract: Combining a wide band gap, strong secondharmonic generation (SHG), and good phase matchability into a single structure is an ongoing challenge in the design of nonlinear optical (NLO) materials. Herein, we report the first examples of fluorinated gallium selenites AGa 3 F 6 (SeO 3 ) 2 [A = Rb (RGFS), Cs (CGFS)] by introducing fluorinated main-group metal octahedra [GaO 2 F 4 ] into the metal selenite system. The two new compounds are isostructural (noncentrosymmetric space group P6 3 mc) and feature interestin… Show more

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Cited by 47 publications
(44 citation statements)
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“…[ 15,28,33,39 ] What's more, the refractive index difference (RID) of DCL‐MgGa 2 Se 4 was investigated by the polarizing microscope method. [ 4d,10,11,40 ] The optical path differences of the DCL‐MgGa 2 Se 4 crystal at 546 nm were 1.48 µm, and the thickness of the crystal was measured to be 31 µm (Figure S8, Supporting Information). According to the Equation () in the Experimental Section, the RID was calculated to be ≈0.048 at 546 nm, which is consistent with the PM behavior.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 15,28,33,39 ] What's more, the refractive index difference (RID) of DCL‐MgGa 2 Se 4 was investigated by the polarizing microscope method. [ 4d,10,11,40 ] The optical path differences of the DCL‐MgGa 2 Se 4 crystal at 546 nm were 1.48 µm, and the thickness of the crystal was measured to be 31 µm (Figure S8, Supporting Information). According to the Equation () in the Experimental Section, the RID was calculated to be ≈0.048 at 546 nm, which is consistent with the PM behavior.…”
Section: Resultsmentioning
confidence: 99%
“…5 pol) with Berek compensator. [ 4d,10,11,40 ] The wavelength of the light source was 546 nm. The RID value is calculated by the following formula: Rbadbreak=||NgNpgoodbreak×Tgoodbreak=normalΔngoodbreak×T\begin{equation} R=\left|{N}_{g}-{N}_{p}\right|\ensuremath{\times{}}T= \Delta n\ensuremath{\times{}}T \end{equation}in which R represents the optical path difference; N g , N p , and Δ n means the refractive index of fast light and slow light, the RID, respectively, and T denotes the thickness of the crystal.…”
Section: Methodsmentioning
confidence: 99%
“…Second-order nonlinear optical (NLO) materials are of great commercial and academic significance owing to their applications as optical frequency multipliers, optical parametric amplifiers, electro-optic rectifiers, etc. For a practical NLO crystalline material, it is necessary to simultaneously satisfy several capability requirements, including strong second-harmonic generation (SHG; >3 × KH 2 PO 4 (KDP)), large optical band gap (>3.0 eV), high laser damage threshold (LDT), wide transparency window for broad-spectrum adaptability, moderate birefringence for phase-matching (PM) behavior, and good chemical and physical stability. However, there are intricate relations between these key functions: SHG performance and optical band gap are mutually conflicting , and a wide band gap usually corresponds to a high LDT but small birefringence . As a result, it is highly challenging to optimize these diverse properties in one material.…”
Section: Introductionmentioning
confidence: 99%
“…To date, borate and phosphate NLO crystals have been applied practically from DUV to visible (Vis) regions, yet the applications of IR NLO crystals, such as AgGaX 2 ( X = S or Se), ZnGeP 2 , SnI 4 ·(S 8 ) 2 , and Ga 2 Se 3 , were impeded by the drawbacks of comparatively small laser damage thresholds (LDTs). It is therefore emergent to synthesize new IR NLO crystals that can combine a strong second-harmonic generation (SHG) response and a high LDT together. , …”
Section: Introductionmentioning
confidence: 99%