Ag2СdSnS4 single crystals as promising materials for optoelectronic

Crystal size-controlled growth of Cu2ZnSnS4 films by optimizing the Na doping concentration

“…Tin-sulphide complex compounds are very promising for optoelectronics, which is a consequence of high electron-phonon anharmonicity for the such kind of compounds [1]. In particular, Cu 2 ZnSnS 4 (CZTS) have attracted great attention because of its optimum direct band gap energy ($ 1.5 eV) [2], large absorption coefficient ( $ 10 4 À 6 cm À 1 ) [3], nontoxic constituent and earth abundant elements.…”

Effect of cation substitution on electronic band structure of ZnGeAs2 pnictides: A mBJLDA approach

“…The band gaps for studied compounds are found in range 0.51-1.27 eV. Thus, these ternary compounds are characterized as narrow band gap semiconductors and may be very promising for nonlinear optics and optoelectronics particularly up to mid-IR range [28][29][30]. The band structures of all these compounds are presented in Fig.…”

Photovoltaic, photoelectric and optical spectra of novel AgxGaxGe1−xSe2 (0.167 ≤ x ≤ 0.333) quaternary single crystals

“…In region III (T 200 K) conduction is described by dependence (6) with E A3 z 0.04e0.06 eV and pre exponential factor s 0 (w10 À4 U À1 cm À1 ). This pattern of low conductivity indicates hopping conduction mechanism in the implementation of localized defect states in the impurity band, which is caused thermally activated hopping of electrons between localized states near E F .…”