2023
DOI: 10.1016/j.mseb.2023.116394
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Ag-nanoparticles-anchored mesoporous In2O3 nanowires for ultrahigh sensitive formaldehyde gas sensors

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Cited by 17 publications
(4 citation statements)
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“…6(c) and 6(e) and Table S8. The formation of Ag/ELFO heterojunction shrinks HAL, which favors the formation of pre-adsorbed oxygen [40]. The electron transfer process from Ag nanoparticles into the conduction band of ELFO increases the band gap of SA samples, which are obtained by Eq.…”
Section: Gas Sensing Mechanismmentioning
confidence: 99%
“…6(c) and 6(e) and Table S8. The formation of Ag/ELFO heterojunction shrinks HAL, which favors the formation of pre-adsorbed oxygen [40]. The electron transfer process from Ag nanoparticles into the conduction band of ELFO increases the band gap of SA samples, which are obtained by Eq.…”
Section: Gas Sensing Mechanismmentioning
confidence: 99%
“…Apart from doping, Kong et al also reported a method for effectively decreasing the operating temperature. 146 Mesoporous In 2 O 3 nanowires modified by Ag nanoparticles were prepared by the hydrolysis reaction. The sensitivity of pristine and Ag-loaded In 2 O 3 to 10 ppm formaldehyde measured at various temperatures revealed that the optimal working temperature decreased from 210 to 150 °C, demonstrating a decrease in the activation energy.…”
Section: Effect Of Heterojunction On the Gas-sensing Performance Of M...mentioning
confidence: 99%
“…Metal oxides’ semiconductors are recognized as the potential advanced functional materials due to the wider band gap, low cost, and chemical stability 1–7 . Among these oxides, indium oxide (In 2 O 3 ) which has excellent electronic, optical, and physical properties, is used in semiconductors, gas sensors, photo catalysts, and energy system 8–10 . As a semiconductor material, In 2 O 3 oxide is a typical n ‐type semiconductor with the wide band gap 11 .…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7] Among these oxides, indium oxide (In 2 O 3 ) which has excellent electronic, optical, and physical properties, is used in semiconductors, gas sensors, photo catalysts, and energy system. [8][9][10] As a semiconductor material, In 2 O 3 oxide is a typical n-type semiconductor with the wide band gap. 11 Li and Feng et al 12 have used the first-principles to explore the structural configuration and electronic properties of the α-In 2 O 3 monolayer.…”
Section: Introductionmentioning
confidence: 99%