Ag-doped SnSe2 as a promising mid-temperature thermoelectric material

Fu, Li; Zheng, Zhaoke; Li, Yiwen; Wang, Wenting; Li, Jing‐Feng; Li, Bo; Zhong, Aihua; Luo, Jingting; Fan, Ping

doi:10.1007/s10853-017-1238-8

Cited by 57 publications

(48 citation statements)

References 31 publications

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“…Figure 8a shows the temperature-dependent total thermal conductivity (κ tot ) for the SnCu 0.005 Se 1.98 Br 0.02 and control samples. The SnCu 0.005 Se 1.98 Br 0.02 sample exhibits a greatly improved maximum ZT (ZT max ) of ≈0.67 in contrast to the pristine SnSe 2 (≈0.08), SnSe 1.98 Br 0.02 (≈0.3), and SuCu 0.005 Se 2 (≈0.35) samples at 773 K. The achieved ZT max is much higher than other reported bulk-synthesized SnSe 2 -based materials such as Sn 0.99 Ag 0.01 Se 2 (ZT ≈ 0.4 at 773 K) [45] and SnSe 2 /SnSe bulk heterojunction (ZT ≈ 0.35 at 800 K). The doped samples exhibit slightly higher κ tot than pristine because of the improved electrical conductivity.…”

Section: Dft Calculationsmentioning

confidence: 68%

“…[63] Figure 9 shows the thermoelectric figure of merit ZT as a function of temperature. The SnCu 0.005 Se 1.98 Br 0.02 sample exhibits a greatly improved maximum ZT (ZT max ) of ≈0.67 in contrast to the pristine SnSe 2 (≈0.08), SnSe 1.98 Br 0.02 (≈0.3), and SuCu 0.005 Se 2 (≈0.35) samples at 773 K. The achieved ZT max is much higher than other reported bulk-synthesized SnSe 2 -based materials such as Sn 0.99 Ag 0.01 Se 2 (ZT ≈ 0.4 at 773 K) [45] and Adv. Funct.…”

Section: Dft Calculationsmentioning

confidence: 68%

“…For example, the polycrystalline SnSe 2 sample with carrier concentration of 4.3 × 10 18 cm −3 shows 80% lower electron mobility of 7.4 cm 2 V −1 s −1 [40] than the single crystal sample with the similar carrier concentration. The achieved PF is record high to date for both polycrystalline SnSe 2 [42,43,45,46] and SnSe. The examples are densifying the nanoparticles prepared by colloidal synthesis, [42] packing the nanoplatelets delicately, [43] and embedding dense nanoscale precipitates into SnSe 2 nanopowders.…”

Section: Introductionmentioning

confidence: 72%

“…The SnCu 0.005 Se 1.98 Br 0.02 sample exhibits an extraordinary temperature-independent PF of ≈12 µW cm −1 K −2 from 300 to 773 K, which is crucial for the stable operation of TE power generator over the wide range of temperature. The achieved PF is record high to date for both polycrystalline SnSe 2 [42,43,45,46] and SnSe. [32,33] It even exceeds the value of the best performing n-type SnSe 0.985 Br 0.015 single crystals above ≈573 K. [47] Its engineering ZT (ZT eng ) is ≈0.25 for the temperatures of hot and cold sides at 300 and 773 K, respectively, which exceeds the any reported value for SnSe 2 -based materials.…”

Section: Introductionmentioning

confidence: 97%

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Cu Intercalation and Br Doping to Thermoelectric SnSe₂ Lead to Ultrahigh Electron Mobility and Temperature‐Independent Power Factor

Zhou

Zhang

et al. 2019

Adv Funct Materials

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Due to its single conduction band nature, it is highly challenging to enhance the power factor of SnSe 2 by band convergence. Here, it is reported that simultaneous Cu intercalation and Br doping induce strong Cu-Br interaction to connect SnSe 2 layers, otherwise isolated, via "electrical bridges." Atom probe tomography analysis confirms a strong attraction between Cu intercalants and Br dopants in the SnSe 2 lattice. Density functional theory calculations reveal that this interaction delocalizes electrons confined around SnSe covalent bonds and enhances charge transfer across the SnSe 2 slabs. These effects dramatically increase electron mobility and concentration. Polycrystalline SnCu 0.005 Se 1.98 Br 0.02 shows even higher electron mobility than pristine SnSe 2 single crystal and the theoretical expectation. This results in significantly improved electrical conductivity without reducing effective mass and Seebeck coefficient, thereby leading to the highest power factor of ≈12 µW cm −1 K −2 to date for polycrystalline SnSe 2 and SnSe. It even surpasses the value for the state-of-the-art n-type SnSe 0.985 Br 0.015 single crystal at elevated temperatures. Surprisingly, the achieved power factor is nearly independent of temperature ranging from 300 to 773 K. The engineering thermoelectric figure of merit ZT eng for SnCu 0.005 Se 1.98 Br 0.02 is ≈0.25 between 773 and 300 K, the highest ZT eng ever reported for any form of SnSe 2 -based thermoelectric materials.

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Section: Dft Calculationsmentioning

confidence: 68%

Section: Dft Calculationsmentioning

confidence: 68%

Section: Introductionmentioning

confidence: 72%

Section: Introductionmentioning

confidence: 97%

See 2 more Smart Citations

Cu Intercalation and Br Doping to Thermoelectric SnSe₂ Lead to Ultrahigh Electron Mobility and Temperature‐Independent Power Factor

Zhou

Zhang

et al. 2019

Adv Funct Materials

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“…Furthermore, theoretical calculations on the formation energy of various doping defects suggest donors are more stable than acceptors [59]. Experimentally, Ag-doping on the cation sited does not enable a ptype conduction and the resulting n-type materials show a very low carrier concentration and thus a low zT of only~0.3 [60]. This indicates the necessity of an effective doping for a high carrier concentration to fully realize the high thermoelectric performance, especially in n-type conduction.…”

Section: Introductionmentioning

confidence: 99%

Promising thermoelectric performance in van der Waals layered SnSe2

Faghaninia

et al. 2017

Materials Today Physics

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a b s t r a c tSnSe as a lead-free IVeVI semiconductor, has attracted intensive attention for its potential thermoelectric applications, since it is less toxic and much cheaper than conventional PbTe and PbSe thermoelectrics. Here we focus on its sister layered compound SnSe 2 in n-type showing a thermoelectric performance to be similarly promising as SnSe in the polycrystalline form. This is enabled by its favorable electronic structure according to first principle calculations, its capability to be effectively doped by bromine on selenium site to optimize the carrier concentration, as well as its intrinsic lattice thermal conductivity as low as 0.4 W/m-K due to the weak van der Waals force between layers. The broad carrier concentration ranging from 0.5 to 6 Â 10 19 cm À3 realized in this work, further leads to a fundamental understanding on the material parameters determining the thermoelectric transport properties, based on a single parabolic band (SPB) model with acoustic scattering. The layered crystal structure leads to a texture in hot-pressed polycrystalline materials and therefore anisotropic transport properties, which can be well understood by the SPB model. This work not only demonstrates SnSe 2 as a promising thermoelectric material but also guides the further improvements particularly by band engineering and texturing approaches.

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High Thermoelectric Power Factors in Plastic/Ductile Bulk SnSe₂‐Based Crystals

Deng,

Gao,

Qiu

et al. 2023

Advanced Materials

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The recently discovered plastic/ductile inorganic thermoelectric (TE) materials open a new avenue for the fabrication of high‐efficiently flexible TE devices, which can utilize the small temperature difference between human body and environment to generate electricity. However, the maximum power factor (PF) of current plastic/ductile TE materials is usually around or less than 10 µW cm−1 K−2, much lower than the classic brittle TE materials. In this work, a record‐high PF of 18.0 µW cm−1 K−2 at 375 K in plastic/ductile bulk SnSe2‐based crystals is reported, superior to all the plastic inorganic TE materials and flexible organic TE materials reported before. The origin of such high PF is from the modulation of material's stacking forms and polymorph crystal structures via simultaneously doping Cl/Br at Se‐site and intercalating Cu inside the van der Waals gap, leading to the significantly enhanced carrier concentrations and mobilities. An in‐plane fully flexible TE device made of the plastic/ductile SnSe2‐based crystals is successfully developed to show a record‐high normalized maximum power density to 0.18 W m−1 under a temperature difference of 30 K. This work indicates that the plastic/ductile material can realize high TE power factor to achieve large output electric power density in flexible TE technology.

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Ag-doped SnSe2 as a promising mid-temperature thermoelectric material

Cited by 57 publications

References 31 publications

Cu Intercalation and Br Doping to Thermoelectric SnSe₂ Lead to Ultrahigh Electron Mobility and Temperature‐Independent Power Factor

Cu Intercalation and Br Doping to Thermoelectric SnSe₂ Lead to Ultrahigh Electron Mobility and Temperature‐Independent Power Factor

Promising thermoelectric performance in van der Waals layered SnSe2

High Thermoelectric Power Factors in Plastic/Ductile Bulk SnSe₂‐Based Crystals

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Ag-doped SnSe2 as a promising mid-temperature thermoelectric material

Cited by 57 publications

References 31 publications

Cu Intercalation and Br Doping to Thermoelectric SnSe2 Lead to Ultrahigh Electron Mobility and Temperature‐Independent Power Factor

Cu Intercalation and Br Doping to Thermoelectric SnSe2 Lead to Ultrahigh Electron Mobility and Temperature‐Independent Power Factor

Promising thermoelectric performance in van der Waals layered SnSe2

High Thermoelectric Power Factors in Plastic/Ductile Bulk SnSe2‐Based Crystals

Contact Info

Product

Resources

About

Cu Intercalation and Br Doping to Thermoelectric SnSe₂ Lead to Ultrahigh Electron Mobility and Temperature‐Independent Power Factor

Cu Intercalation and Br Doping to Thermoelectric SnSe₂ Lead to Ultrahigh Electron Mobility and Temperature‐Independent Power Factor

High Thermoelectric Power Factors in Plastic/Ductile Bulk SnSe₂‐Based Crystals