Ag and Au atoms intercalated in bilayer heterostructures of transition metal dichalcogenides and graphene

İyikanat, Fadıl; Şahin, Hasan; Senger, R. T.; Peeters, F. M.

doi:10.1063/1.4893543

Cited by 14 publications

(11 citation statements)

References 65 publications

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“…As for the intercalation mechanism of silicon in between MoS 2 layers, we can only speculate. A plethora of studies on the intercalation of different chemical species in TMDs have been reported from elements as small as lithium [ 51 ], sodium [ 52 – 54 ] and carbon [ 55 ] to elements as large as cesium [ 56 – 57 ] and gold [ 58 ]. Other studies report on the intercalation of silicon and other elements under graphene layers synthesized on metal substrates [ 59 – 61 ].…”

Section: Resultsmentioning

confidence: 99%

Intercalation of Si between MoS₂ layers

Bremen¹,

Yao²,

Banerjee³

et al. 2017

Beilstein J. Nanotechnol.

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We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS2). At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS2 layers. Our evidence relies on several experimental observations: (1) Upon the deposition of Si on pristine MoS2 the morphology of the surface transforms from a smooth surface to a hill-and-valley surface. The lattice constant of the hill-and-valley structure amounts to 3.16 Å, which is exactly the lattice constant of pristine MoS2. (2) The transitions from hills to valleys are not abrupt, as one would expect for epitaxial islands growing on-top of a substrate, but very gradual. (3) I(V) scanning tunneling spectroscopy spectra recorded at the hills and valleys reveal no noteworthy differences. (4) Spatial maps of dI/dz reveal that the surface exhibits a uniform work function and a lattice constant of 3.16 Å. (5) X-ray photo-electron spectroscopy measurements reveal that sputtering of the MoS2/Si substrate does not lead to a decrease, but an increase of the relative Si signal. Based on these experimental observations we have to conclude that deposited Si atoms do not reside on the MoS2 surface, but rather intercalate between the MoS2 layers. Our conclusion that Si intercalates upon the deposition on MoS2 is at variance with the interpretation by Chiappe et al. (Adv. Mater. 2014, 26, 2096–2101) that silicon forms a highly strained epitaxial layer on MoS2. Finally, density functional theory calculations indicate that silicene clusters encapsulated by MoS2 are stable.

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Section: Resultsmentioning

confidence: 99%

Intercalation of Si between MoS₂ layers

Bremen¹,

Yao²,

Banerjee³

et al. 2017

Beilstein J. Nanotechnol.

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“…[6][7][8][9][10][11] Various experimental methods to thin down TMDs to monolayers [12][13][14] and a number of theoretical studies revealing the possibility of tuning their properties have already been reported. [15][16][17][18] In addition to TMDs (MoX 2 X= S, Se, Te) having graphene-like crystal structure, recent efforts have also led to the synthesis of novel TMDs with entirely different crystal structures. Titanium trisulphide (TiS 3 ) is one of the most recent examples of such layered transition metal chalcogenides.…”

Section: Introductionmentioning

confidence: 99%

“…The wide range of different structural forms and the tunability of their electronic properties have made two-dimensional ultrathin materials popular in the field of condensed matter physics. In the past decade, following the synthesis of graphene, , layered crystals of transition metal dichalcogenides (TMDs) have attracted tremendous interest owing to their remarkable electronic, mechanical, and optical properties. − Depending on the combination of metal and chalcogen atoms, TMDs may display metallic, semimetallic, semiconducting, and even superconducting behavior. − Various experimental methods to thin down TMDs to monolayers − and a number of theoretical studies revealing the possibility of tuning their properties have already been reported. − In addition to TMDs (MoX 2 , X = S, Se, Te) having graphene-like crystal structure, recent efforts have also led to the synthesis of novel TMDs with entirely different crystal structures. Titanium trisulfide (TiS 3 ) is one of the most recent examples of such layered transition metal chalcogenides.…”

Section: Introductionmentioning

confidence: 99%

Vacancy Formation and Oxidation Characteristics of Single Layer TiS₃

et al. 2015

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The structural, electronic, and magnetic properties of pristine, defective, and oxidized monolayer TiS 3 are investigated using first-principles calculations in the framework of density functional theory. We found that a single layer of TiS 3 is a direct band gap semiconductor, and the bonding nature of the crystal is fundamentally different from other transition metal chalcogenides. The negatively charged surfaces of single layer TiS 3 makes this crystal a promising material for lubrication applications. The formation energies of possible vacancies, i.e. S, Ti, TiS, and double S, are investigated via total energy optimization calculations. We found that the formation of a single S vacancy was the most likely one among the considered vacancy types. While a single S vacancy results in a nonmagnetic, semiconducting character with an enhanced band gap, other vacancy types induce metallic behavior with spin polarization of 0.3−0.8 μ B . The reactivity of pristine and defective TiS 3 crystals against oxidation was investigated using conjugate gradient calculations where we considered the interaction with atomic O, O 2 , and O 3 . While O 2 has the lowest binding energy with 0.05−0.07 eV, O 3 forms strong bonds stable even at moderate temperatures. The strong interaction (3.9−4.0 eV) between atomic O and TiS 3 results in dissociative adsorption of some O-containing molecules. In addition, the presence of S-vacancies enhances the reactivity of the surface with atomic O, whereas it had a negative effect on the reactivity with O 2 and O 3 molecules.

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“…38 This allows Ag to ionize at relatively lower electrochemical potentials and migrate owing to its comparatively small ionic size through the hBN matrix to the Cu electrode. 39 Here nanoclusters are nucleated which grow in the form of laments. Following electroforming, the device is cycled between LRS and HRS several times.…”

Section: Discussionmentioning

confidence: 99%

Realizing neuromorphic networks at self-organized criticality on a 2D hexagonal BN platform

Nukala

Rao

Sanjay

et al. 2023

Preprint

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Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics arise due to the critical nature and complex interconnectivity of the brain and its neuronal network. We demonstrate that a system comprising of multilayer hexagonal Boron Nitride (hBN) films contacted with Silver (Ag), that can uniquely host two different self-assembled networks, which are self-organized at criticality (SOC). This system shows bipolar resistive switching between high resistance (HRS) and low resistance states (LRS). In the HRS, Ag clusters (nodes) intercalate in the van der Waals gaps of hBN forming a network of tunnel junctions, whereas the LRS contains a network of Ag filaments. The temporal avalanche dynamics in both these states exhibit power-law scaling, long-range temporal correlation, and SOC. These networks can be tuned from one to another with voltage as a control parameter. For the first time, different neuron-like networks are realized in a single CMOS compatible, 2D materials platform.

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Ag and Au atoms intercalated in bilayer heterostructures of transition metal dichalcogenides and graphene

Cited by 14 publications

References 65 publications

Intercalation of Si between MoS₂ layers

Intercalation of Si between MoS₂ layers

Vacancy Formation and Oxidation Characteristics of Single Layer TiS₃

Realizing neuromorphic networks at self-organized criticality on a 2D hexagonal BN platform

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Ag and Au atoms intercalated in bilayer heterostructures of transition metal dichalcogenides and graphene

Cited by 14 publications

References 65 publications

Intercalation of Si between MoS2 layers

Intercalation of Si between MoS2 layers

Vacancy Formation and Oxidation Characteristics of Single Layer TiS3

Realizing neuromorphic networks at self-organized criticality on a 2D hexagonal BN platform

Contact Info

Product

Resources

About

Intercalation of Si between MoS₂ layers

Intercalation of Si between MoS₂ layers

Vacancy Formation and Oxidation Characteristics of Single Layer TiS₃