We report an atomic force microscopic (AFM) study of photoinduced dislocation lines (DLs) on the (111)
face of C60 single crystals via excitation of the Frenkel exciton transition of solid C60. Under illumination,
DLs appeared along the [112̄] direction on the (111) face of the C60 single crystals. These DLs consist of
pairs of substructures that are separated by a hollow region with a width of 30.0 ± 0.5 nm and a depth of
0.08 ± 0.02 nm, while the height difference between the topmost regions of the substructures and the
surrounding face-centered-cubic (fcc) regions is 0.30 ± 0.03 nm. The two substructures correspond to ridge-like domain walls enclosing narrow strips of metastable hexagonal-close-packed (hcp) domains on the
surrounding fcc surface. It was also observed that the pair of substructures constituting the DLs is terminated
by a U-shaped growing tip. The photodriven growth of these DLs displayed unique dynamic surface
reconstruction behavior. They also exhibited different types of collision processes depending on the growth
rate. The driving force for the dynamic process is considered to be the recombination of excitons at surface
defects or at the growing tip of each DL. Furthermore, a threshold light intensity value of 0.8 mW/mm2 was
found for the generation of DLs, which indicates that multiexciton relaxation is a prerequisite for the
photoinduced dislocation.