1995
DOI: 10.1143/jjap.34.1381
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AFM Observation of Self-Assembled Monolayer Films on GaAs (110)

Abstract: We have confirmed that a self-assembled monolayer (SAM) film of octadecanethiol (ODT), CH3(CH2)17SH, can be formed on a cleaved GaAs (110) surface, by using an atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). Circular depressions were observed on the surface after film formation. The area of the circular depressions increased with immersion time, indicating that the solution oxidized the interface between ODT molecules and the GaAs surface, resulting in removal of ODT molecules. The o… Show more

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Cited by 41 publications
(32 citation statements)
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“…[43] Most passivation strategies found in the literature employ inorganic or organic thiols, where sulfur is intended to bind covalently to the GaAs surface, but the stability of the adsorbed monolayers is often limited, in part due to their defective structure. [18,44] Our observations on self-assembled monolayers (SAMs) of ODT and MHDA are in accordance with earlier findings. [15,16,18,37] The ellipsometrically obtained thicknesses of 1.5 nm point to a tilted arrangement of the alkyl chains with respect to the surface normal, as has been previously reported.…”
Section: Discussionsupporting
confidence: 92%
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“…[43] Most passivation strategies found in the literature employ inorganic or organic thiols, where sulfur is intended to bind covalently to the GaAs surface, but the stability of the adsorbed monolayers is often limited, in part due to their defective structure. [18,44] Our observations on self-assembled monolayers (SAMs) of ODT and MHDA are in accordance with earlier findings. [15,16,18,37] The ellipsometrically obtained thicknesses of 1.5 nm point to a tilted arrangement of the alkyl chains with respect to the surface normal, as has been previously reported.…”
Section: Discussionsupporting
confidence: 92%
“…[18,44] Our observations on self-assembled monolayers (SAMs) of ODT and MHDA are in accordance with earlier findings. [15,16,18,37] The ellipsometrically obtained thicknesses of 1.5 nm point to a tilted arrangement of the alkyl chains with respect to the surface normal, as has been previously reported. [37,45] Further, the surface topography after SAM formation was confirmed to have an island-like character for both compounds.…”
Section: Discussionsupporting
confidence: 92%
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“…We can eliminate the latter contribution and estimate the film conductance by analyzing the dependence on the separation of the electrodes. An Ag film with a thickness of about 500 nm was evaporated on the cleaned surface of a semi-insulator GaAs wafer and the SAM film was made by cleaving the GaAs with the Ag film in a solution of pyridine thiol and butane thiol [14,15]. In this case, we detected current up to 10 nA adjacent to the Ag region using AFM at sample bias voltages of +2 or 3 V between the tip and the Ag electrode.…”
Section: Resultsmentioning
confidence: 99%