AFM Application in III-Nitride Materials and Devices

Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to InxGa1–xN Surfaces

“…The different size of the pits can be attributed to threading dislocations of different type in the crystal lattice. 36,37 Micronscale variations in topography emerge, contributing to the RMS values provided in Table 1 given in Table 1, reveals that the defect depth varies significantly across the substrate. Although the literature is rich with studies featuring optical characterization of In x Ga 1−x N systems 38−40 there are fewer resources devoted to analysis of the surface chemical effects that become apparent when scanning across a surface gradient.…”

“…The different size of the pits can be attributed to threading dislocations of different type in the crystal lattice. 36,37 Micronscale variations in topography emerge, contributing to the RMS values provided in Table 1. RMS roughness increases for the intermediate regions of the substrate, and the general variability can be attributed to the changing defect morphology as well as composition variations in the underlying InGaN substrate.…”

Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD

“…First of all, to finally shorten their length by bending out and migrating with its termination point down to the NC foot, such dislocations have to increase their length first to reach c-plane/m-plane intersection, for which, the thermal energy at regrowth conditions may not be sufficient. Secondly termination points of TDs are often decorated with V-pits [41] and thus can be strongly pinned to these surface defects.…”