2009
DOI: 10.1140/epjd/e2009-00117-6
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AFM and contact angle investigation of growth and structure of pp-HMDSO thin films

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Cited by 25 publications
(30 citation statements)
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“…The absorbance at 3350 cm −1 is characteristic for stretching of the N-H bond, while the doublet at 2350 cm −1 is attributed to CO2 species [10]. As in the case of unmodified PDMS, the presence of methyl moieties in the modified surface is confirmed by an absorption band at 1410 cm −1 , related to CH3 asymmetric bending in Si-CH3 bonds, and 2965 and 2906 cm −1 bands, which are characteristic for asymmetric stretching and symmetric stretching of the CH3 group, respectively [14,15]. A low intensity band at 1454 cm −1 is assigned to the asymmetric bending vibrations of the CH2 group in the Si-CH2-CH2-Si link that play a substantial role in the cross-linking process during HMDS polymerization [15].…”
Section: Resultsmentioning
confidence: 77%
“…The absorbance at 3350 cm −1 is characteristic for stretching of the N-H bond, while the doublet at 2350 cm −1 is attributed to CO2 species [10]. As in the case of unmodified PDMS, the presence of methyl moieties in the modified surface is confirmed by an absorption band at 1410 cm −1 , related to CH3 asymmetric bending in Si-CH3 bonds, and 2965 and 2906 cm −1 bands, which are characteristic for asymmetric stretching and symmetric stretching of the CH3 group, respectively [14,15]. A low intensity band at 1454 cm −1 is assigned to the asymmetric bending vibrations of the CH2 group in the Si-CH2-CH2-Si link that play a substantial role in the cross-linking process during HMDS polymerization [15].…”
Section: Resultsmentioning
confidence: 77%
“…Many studies showed that deposition time can lead to an increase in the thickness of the coating [77,78,89]. The results of 25 minute deposition time (contact angle and contact angle hysteresis) were satisfactory, however.…”
Section: ïV-3-optimization Of Plasma Process Parametersmentioning
confidence: 99%
“…Due to this assets, many studies have preferred the plasma polymerization of different organosilicon precursors in order to create a hydrophobic coating [41,[75][76][77][78][79][80][81][82].…”
Section: Ii-4-1-influence Of Precursor Chemistrymentioning
confidence: 99%
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