1995
DOI: 10.1016/0169-4332(94)00538-9
|View full text |Cite
|
Sign up to set email alerts
|

AES and XPS study of thin RF-sputtered Ta2O5 layers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

7
60
1

Year Published

1999
1999
2021
2021

Publication Types

Select...
9

Relationship

2
7

Authors

Journals

citations
Cited by 189 publications
(68 citation statements)
references
References 31 publications
7
60
1
Order By: Relevance
“…32 In order to achieve such low losses in dielectric mirror coatings, it is a standard procedure to anneal the coatings after fabrication. Annealing leads to homogenization of the oxide layers and improves the stoichiometry of nonperfect oxides, 41 reducing coating losses typically by 10 ppm. This procedure is thus a key step in the process of manufacturing ultra-low-loss mirrors.…”
Section: Annealing Mirrorsmentioning
confidence: 99%
“…32 In order to achieve such low losses in dielectric mirror coatings, it is a standard procedure to anneal the coatings after fabrication. Annealing leads to homogenization of the oxide layers and improves the stoichiometry of nonperfect oxides, 41 reducing coating losses typically by 10 ppm. This procedure is thus a key step in the process of manufacturing ultra-low-loss mirrors.…”
Section: Annealing Mirrorsmentioning
confidence: 99%
“…With respect to the FM/oxide interface, XPS measurement has been proven to be an effective tool [19][20][21]. The XPS detectable sample depth is d = 3 sin˛, where is the inelastic mean-free paths (IMFPs) for photoelectrons and ˛ is the take off angle for photoelectrons with respect to the sample surface plane [22]. The IMFPs can be calculated by using the table compiled by Tanuma et al [23].…”
Section: Resultsmentioning
confidence: 99%
“…The vacuum of the analysis chamber was less than 3×10 −7 Pa. The XPS detectable sampling depth was d=3λsinα [14] , where λ and α are inelastic meanfree paths (IMFPs) for photoelectrons and a take-off angle for photoelectrons with respect to the samples surface plane, respectively. The IMFPs can be obtained by using the table compiled by Tanuma et al [15] The detectable depths from 2.3 to 0.6 nm are obtained when the take-off angle changes from 90° to 15°.…”
Section: Resultsmentioning
confidence: 99%