1999
DOI: 10.15407/spqeo2.03.081
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AES and XPS characterization of TiN Layers formed and modified by ion implantation

Abstract: Compositional characterization of sputtered and implanted titanium nitride (TiN) layers for microelectronics application is performed based on Auger Electron Spectroscopy (AES) and X-ray induced Photoelectron Spectroscopy (XPS) data. AES shows a strong overlapping of the most intensive peaks of Ti and N. A simple empirical method using intensity relations of Auger spectra is developed for quick estimation of layer composition in small areas. Defined modification of the TiN layers was realized by means of carbo… Show more

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Cited by 5 publications
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“…1a), which was addressed by a procedure reported previously and described above in the Methods section. 26 Upon ∼40 min ambient exposure, oxidation is observed, with the presence of an oxygen peak and an AES-derived N/O atomic ratio of 0.7 (Fig. 1a).…”
Section: Resultsmentioning
confidence: 99%
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“…1a), which was addressed by a procedure reported previously and described above in the Methods section. 26 Upon ∼40 min ambient exposure, oxidation is observed, with the presence of an oxygen peak and an AES-derived N/O atomic ratio of 0.7 (Fig. 1a).…”
Section: Resultsmentioning
confidence: 99%
“…Auger spectra were recorded at 3 keV incident electron beam energy. Due to the overlap in kinetic energy of the Ti (LMM) and N (KLL) peaks, the equation below was used to calculate the N/Ti atomic ratio as reported by Melnik et al 26 In the above equation, Ti(1) is the intensity of the overlapping Ti (LMM) and N (KLL) peaks; Ti(2) is the second Ti peak and α = Ti(2)/Ti(1) for pure Ti, and was found to be 0.8 for our installation.…”
Section: Methodsmentioning
confidence: 99%
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