Aerial image improvements on the Intel MET

Caudillo, Román; Younkin, Todd R.; Putna, Steve; Myers, Alan M.; Shroff, Yashesh; Bacuita, Terence; Kloster, Grant M.; Sohmen, Erik

doi:10.1117/12.849142

Cited by 6 publications

(9 citation statements)

References 6 publications

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“…Following this an EUV-sensitive, positive tone photoresist (4.76 wt % poly[(4-hydroxystyrene) 0.6 - co -(styrene) 0.2 - co -( tert- butyl acrylate) 0.2 ], 0.44 wt % triphenylsulfonium triflate, and 0.076 wt % trioctylamine in ethyl lactate) was spin-coated onto the wafers, which was followed by annealing at 105 °C on a hot plate for 1 min to give a film with a thickness of 55 nm, which was determined by spectroscopic ellipsometry. The wafers were exposed on an EUV microexposure tool (MET). , Following exposure the wafers were annealed at 95 °C for 60 s, and then the regions that were exposed to EUV light were removed by rinsing with 2.38% TMAH at room temperature for 30 s, rinsing in deionized water, and drying with a stream of N 2 gas. The result was wafers with 1:1 line-space patterns with trench widths ranging from 22 to 500 nm.…”

Section: Experimental Methodsmentioning

confidence: 99%

Behavior of Lamellar Forming Block Copolymers under Nanoconfinement: Implications for Topography Directed Self-Assembly of Sub-10 nm Structures

Keen¹,

Cheng²,

Yu³

et al. 2013

Macromolecules

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Directed self-assembly of block copolymers (BCPs) is a promising technique for the nanofabrication of structures with dimensions smaller than what can be achieved by current photolithography approaches. In particular, there has been significant interest in the development of BCPs that can achieve ever smaller feature sizes with low levels of defects. Here we investigate the directed self-assembly of a high-χ BCP, polystyrene-block-poly(DL-lactide), which is capable of producing structures with dimensions less than 10 nm. In addition, we study the behavior of the BCP under nanoconfinement and the ability of the polymer chains to compress and stretch in response to the geometry of the confining volume. Key findings of this study are that the level of defects in the self-assembled structures are strongly related to the relative interfacial interactions of the BCP as well as the degree of frustration of the polymer chains under nanoconfinement relative to the bulk. These results have particular significance for nanofabrication of ordered structures, which is of relevance for the fabrication of nanowires, metamaterials, and next-generation computer chips.

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Section: Experimental Methodsmentioning

confidence: 99%

Behavior of Lamellar Forming Block Copolymers under Nanoconfinement: Implications for Topography Directed Self-Assembly of Sub-10 nm Structures

Keen¹,

Cheng²,

Yu³

et al. 2013

Macromolecules

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“…However, post-lithography processes, such as vapor smoothing, ozonation, and rinse, have been intensively investigated for the reduction in LER. 4,5) It has been demonstrated that these processes can reduce LER by 10 -40%. 5) Thus, LER will also be a noncritical issue for the insertion of 22 nm pilot lines at least in combination with the post-lithography processes.…”

Section: Introductionmentioning

confidence: 99%

“…4,5) It has been demonstrated that these processes can reduce LER by 10 -40%. 5) Thus, LER will also be a noncritical issue for the insertion of 22 nm pilot lines at least in combination with the post-lithography processes. Also, not critical but more practical issues, such as defects and etching durability, have recently attracted attention.…”

Section: Introductionmentioning

confidence: 99%

Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Kozawa

Oizumi²,

Itani³

et al. 2010

Jpn. J. Appl. Phys.

147

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The development of extreme ultraviolet (EUV) lithography has progressed owing to worldwide effort. As the development status of EUV lithography approaches the requirements for the high-volume production of semiconductor devices with a minimum line width of 22 nm, the extraction of resist parameters becomes increasingly important from the viewpoints of the accurate evaluation of resist materials for resist screening and the accurate process simulation for process and mask designs. In this study, we demonstrated that resist parameters (namely, quencher concentration, acid diffusion constant, proportionality constant of line edge roughness, and dissolution point) can be extracted from the scanning electron microscopy (SEM) images of patterned resists without the knowledge on the details of resist contents using two types of latest EUV resist. #

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“…EUV exposures were done on an ASML ADT at 0.25NA using conventional illumination (σ=0.25) for FTL determination. High resolution EUV patterning was performed on the 0.3NA EUV Micro-Exposure Tool (MET) using C-dipole illumination [5,6]. All EUV exposures were performed on 20nm organic underlayer.…”

Section: Methodsmentioning

confidence: 99%

“…Since this paper aims at quantifying the contribution at the 22nm node, the system should be able to image this resolution with sufficient process latitude. For this purpose the 0.3NA Intel EUV Micro-Exposure Tool with Dipole illumination is used [5,6]. Next to the continuum multi-wavelength model the data will also be analyzed with a stochastic EUV resist model [6,7].…”

Section: Introductionmentioning

confidence: 99%

EUV secondary electron blur at the 22nm half pitch node

et al. 2011

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In this paper the Arrhenius behavior of blur upon EUV exposure is investigated through variation of the PEB temperature. In this way, thermally activated parameters that contribute to blur (such as acid/base diffusion) can be separated from non-thermally activated parameters (such as secondary electron blur). The experimental results are analyzed in detail using multi-wavelength resist modeling based on the continuum approach and through fitting of the EUV data using stochastic resist models. The extracted blur kinetics display perfectly linear Arrhenius behavior, indicating that there is no sign for secondary electron blur at 22nm half pitch. At the lowest PEB setting the total blur length is ~4nm, indicating that secondary electron blur should be well below that. The stochastic resist model gives a best fit to the current data set with parameters that result in a maximum probability of acid generation at 2.4nm from the photon absorption site. Extrapolation of the model predicts that towards the 16nm half pitch the impact on sizing dose is minimal and an acceptable exposure latitude is achievable. In order to limit the impact on line width roughness at these dimensions it will be required to control acid diffusion to ~5nm.

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Aerial image improvements on the Intel MET

Cited by 6 publications

References 6 publications

Behavior of Lamellar Forming Block Copolymers under Nanoconfinement: Implications for Topography Directed Self-Assembly of Sub-10 nm Structures

Behavior of Lamellar Forming Block Copolymers under Nanoconfinement: Implications for Topography Directed Self-Assembly of Sub-10 nm Structures

Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography

EUV secondary electron blur at the 22nm half pitch node

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