Advantages of transparent conducting oxide thin films with controlled permittivity for thin film photovoltaic solar cells

Gessert, T. A.; Burst, James M.; Li, X.; Scott, Marty; Coutts, T. J.

doi:10.1016/j.tsf.2011.01.143

Cited by 29 publications

(9 citation statements)

References 6 publications

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“…The high transparency comes from the combination of a wide optical band gap-due to high free carrier densities (Burstein-Moss shift) and a low free-carrier absorption in the IR-due to the high mobility-. In fact, it has also been proposed that the improved IR transmittance originates from a modification of the permittivity of the material with adding ZrO2 [16]. We optimized IO:Zr for application as the front electrode in SHJ solar cells, and compare the solar cell properties to reference In-based electrodes, mainly ITO and IO:H. As the fabrication of this high-performing electrode does not require the intentional introduction of water during deposition to achieve high mobilities, and its high conductivity will allow a reduction of this layer thickness by almost half, IO:Zr is a strong candidate for next-generation TCO in industrial production with reduce cost as compare to standard ITO [17] [18].…”

Section: Introductionmentioning

confidence: 99%

Highly Conductive and Broadband Transparent Zr-Doped In₂O₃ as Front Electrode for Solar Cells

Morales‐Masis

Rucavado

Monnard

et al. 2018

IEEE J. Photovoltaics

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Broadband-transparent and highly-conducting electrodes are key to avoid parasitic absorption and electrical losses in solar cells. Here, we propose zirconiumdoped indium oxide (IO:Zr) as a transparent electrode intrinsically meeting both requirements and demonstrate its application as the front electrode in silicon heterojunction (SHJ) solar cells. The exceptional properties of this material rely on the combination of high-doping and high electron mobilities, achieving with this a wide optical band gap (3.5-4 eV), low free carrier absorption and high lateral conductivity. A single film of IO:Zr, has an electron mobility of 100 cm 2 /Vs with a carrier density of 2.5-3×10 20 cm -3 , resulting in a sheet resistance around 25 Ohm/sq for 100 nm-thick films. Their implementation as front electrode in SHJ solar cells results in an important gain in current density as compared to the standardly used Sn-doped indium oxide (ITO). This is due to reduced parasitic absorption in both, the UV and IR, as confirmed by external quantum efficiency (EQE) measurements. Silicon heterojunction devices with the optimized IO:Zr front electrode, resulted in current densities of 40 mA/cm 2 , fill factor of 80%, and a conversion efficiency of 23.4 %.Index Terms-zirconium-doped indium oxide, wide band gap semiconductors, transparent electrodes, heterojunctions, electron mobility, solar cells, silicon. 2002 Neuchatel, Switzerland

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Section: Introductionmentioning

confidence: 99%

Highly Conductive and Broadband Transparent Zr-Doped In₂O₃ as Front Electrode for Solar Cells

Morales‐Masis

Rucavado

Monnard

et al. 2018

IEEE J. Photovoltaics

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“…Here, we include few experimental results of RIE textured glass surface morphologies [21][22][23][24]. Various etching chemistries are generally used for glass etching.…”

Section: Plasma Textured Glass Surface Morphologiesmentioning

confidence: 99%

“…Thus, the textured glass surface substrates with nano-and micro size features can be employed to scatter light in lower as well as in longer wavelength region. Recently, textured glass surface morphologies with high rms roughness and haze ratio were proposed for high efficiency a-Si TFSCs due to their superior electrical and optical characteristics as compared to textured TCO films [15,[16][17][18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Plasma Textured Glass Surface Morphologies for Amorphous Silicon Thin Film Solar Cells-A review

Hussain

Balaji²,

Kim³

et al. 2016

Transactions on Electrical and Electronic Materials

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The surface morphology of the front transparent conductive oxide (TCO) films plays a vital role in amorphous silicon thin film solar cells (a-Si TFSCs) due to their high transparency, conductivity and excellent light scattering properties. Recently, plasma textured glass surface morphologies received much attention for light trapping in a-Si TFSCs. We report various plasma textured glass surface morphologies for the high efficiency of a-Si TFSCs. Plasma textured glass surface morphologies showed high rms roughness, haze ratio with micro-and nano size surface features and are proposed for future high efficiency of a-Si TFSCs.

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“…Another possibility to raise p is to tune the dielectric permittivity of the TCO window through the judicious doping by a high-permittivity material (e.g. ZrO 2 ) [19].…”

Section: Introductionmentioning

confidence: 99%

Highly conductive ZnO films with high near infrared transparency

Hála

Fujii

Redinger

et al. 2015

Progress in Photovoltaics

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We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that the low-voltage radio frequency (RF) biasing of the growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ ≤ 1 · 10 −3 Ω cm). The films prepared with additional RF biasing possess lower free carrier concentration and higher free carrier mobility than the Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the NIR spectral region. Furthermore, these films exhibit good ambient stability, and lower high temperature stability than the AZO films of the same thickness.We also present the characteristics of Cu (

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Advantages of transparent conducting oxide thin films with controlled permittivity for thin film photovoltaic solar cells

Cited by 29 publications

References 6 publications

Highly Conductive and Broadband Transparent Zr-Doped In₂O₃ as Front Electrode for Solar Cells

Highly Conductive and Broadband Transparent Zr-Doped In₂O₃ as Front Electrode for Solar Cells

Plasma Textured Glass Surface Morphologies for Amorphous Silicon Thin Film Solar Cells-A review

Highly conductive ZnO films with high near infrared transparency

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Advantages of transparent conducting oxide thin films with controlled permittivity for thin film photovoltaic solar cells

Cited by 29 publications

References 6 publications

Highly Conductive and Broadband Transparent Zr-Doped In2O3 as Front Electrode for Solar Cells

Highly Conductive and Broadband Transparent Zr-Doped In2O3 as Front Electrode for Solar Cells

Plasma Textured Glass Surface Morphologies for Amorphous Silicon Thin Film Solar Cells-A review

Highly conductive ZnO films with high near infrared transparency

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Highly Conductive and Broadband Transparent Zr-Doped In₂O₃ as Front Electrode for Solar Cells

Highly Conductive and Broadband Transparent Zr-Doped In₂O₃ as Front Electrode for Solar Cells