Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Feng, Wei; Hettiarachchi, R.; Sato, Setsuko; Kakushima, Kuniyuki; Niwa, Miki; Yamada, Keiichi; Ohmori, Kenji

doi:10.7567/jjap.51.04dc06

Cited by 10 publications

(7 citation statements)

References 21 publications

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“…Starting from microelectronics, a lot of effort has been spent in recent years to find novel solutions that permit to surpass the limitations of the modern-day Moore's law [13]. In particular, approaching the nanoscale dimension, a natural field of research is the application of silicon nanowires (Si NWs) as a channel for a Field Effect Transistor [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

Leonardi

Irrera

2020

Nanomaterials

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Silicon nanowires (Si NWs) are emerging as an innovative building block in several fields, such as microelectronics, energetics, photonics, and sensing. The interest in Si NWs is related to the high surface to volume ratio and the simpler coupling with the industrial flat architecture. In particular, Si NWs emerge as a very promising material to couple the light to silicon. However, with the standard synthesis methods, the realization of quantum-confined Si NWs is very complex and often requires expensive equipment. Metal-Assisted Chemical Etching (MACE) is gaining more and more attention as a novel approach able to guarantee high-quality Si NWs and high density with a cost-effective approach. Our group has recently modified the traditional MACE approach through the use of thin metal films, obtaining a strong control on the optical and structural properties of the Si NWs as a function of the etching process. This method is Complementary Metal-Oxide-Semiconductors (CMOS)-technology compatible, low-cost, and permits us to obtain a high density, and room temperature light-emitting Si NWs due to the quantum confinement effect. A strong control on the Si NWs characteristics may pave the way to a real industrial transfer of this fabrication methodology for both microelectronics and optoelectronics applications.

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Section: Introductionmentioning

confidence: 99%

CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

Leonardi

Irrera

2020

Nanomaterials

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“…The arising of new physical phenomena on the nanoscale promoted the emerging of Si nanostructures for the past, present and future technologies. In particular, silicon nanowires (Si NWs) developed as a novel resource in many different fields, such as electronics [5][6][7], photovoltaics [8][9][10], photonics [11][12][13], and sensing [14][15][16], as schematized in Figure 1.…”

Section: Particular Silicon Nanowiresmentioning

confidence: 99%

“…The FET was realized with p-type Si NWs having diameters of 10-20 nm dispersed on a 600 nm silicon oxide layer on top of a silicon wafer. Moreover, the paper of Feng et al [6] reports a low-frequency noise behavior of Si NW FET compared to the planar standard due to the electrons quantum confinement in 1D. As an example of a typical Si NW FET architecture, the device obtained from Koo et al [7] is shown at the top of Figure 1.…”

Section: Figurementioning

confidence: 99%

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

2021

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Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow’s technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach.

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“…Metal oxide semiconductor has moderate sensitivity, rapid sensor recovery, and long sensor life with affordable cost. The disadvantages of this type of sensor include power consumption, high temperature operation, and sensitivity to humidity . While conducting polymer sensor can operate at ambient temperature and is inexpensive, the sensor life is influenced by oxidation due to its sensitivity to humidity and temperature .…”

Section: Sensors Used In Meat Industrymentioning

confidence: 99%

An overview of smart packaging technologies for monitoring safety and quality of meat and meat products

et al. 2018

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The food packaging sector has experienced much development since its inception. In the past few decades, innovations in packaging sector have led to the development of smart packaging (SP) systems that carve a niche in a highly competitive food industry. SP systems have great potential for improving the shelf‐life, and safety of food products apart from their basic roles of protecting the products against unwanted biological, chemical, and physical damage and keeping them clean. Indicators and sensors, SP components, are used for real‐time monitoring of meat quality and subsequently inform the retailers and consumers about the freshness, microbiological, temperature, and shelf life status of the products. Barcodes and radio‐frequency identification tags are employed in meat packaging for real‐time information about the authenticity, and traceability of the products in the supply chain. Recently, innovations in SP technologies resulted in fast, sensitive, and effective detection, sensing, and record keeping of freshness, microbiological, and shelf life status of meat and meat products. The SP system shows promise for extensive utilization in the meat industry in response to the consumer appreciation for safe, and quality meat products, as well as their waste reduction notions. This paper gives an updated overview of ongoing scientific research, and recent technological advances that offer the perspectives of developing smart meat packaging systems that are capable of monitoring the physical, microbial, and chemical changes of the package contents from producer to the point of sale and even beyond, and remediating potential adverse reactions.

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Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Cited by 10 publications

References 21 publications

CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

An overview of smart packaging technologies for monitoring safety and quality of meat and meat products

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