Advantages of AlGaN Tunnel Junction in N-Polar 284 nm Ultraviolet-B Light Emitting Diode
Hafeez Ur Rahman,
Khalid. Ayub,
Nawaz Sharif
et al.
Abstract:Here an approach is presented to electrically operate the quantum tunnelling probability by exploiting the transported carriers at the interface of p-AlGaN/n-AlGaN/n++-AlGaN tunnel junction (TJ) with moderate Si and Mg-doping levels and optimized thickness with the help of simulation study. The simulation results show that the Augur recombination rate is successfully suppressed and quite a high radiative recombination rate is achieved in the 284 nm N-polar AlGaN-based TJ UV-B LEDs, which is attributed to the i… Show more
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