Advances of beveled mesas for GaN-based trench Schottky barrier diodes

Huang, Fuping; Jia, Xingyu; Liu, Yajin; Tian, Kangkai; Chu, Chunshuang; Zheng, Quan; Zhang, Yonghui; Xin, Zhen; Zhang, Zihui; Li, Qing

doi:10.1063/5.0033844

Cited by 5 publications

(3 citation statements)

References 46 publications

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“…If we refer to Fig. 2(b), we find that the forward bias for VCSEL B3 becomes smaller than that for VCSEL B2, which is likely due to the increased hole concentration in the p-GaN layer and enhances the electrical conductivity therein for VCSEL B3 [24] . To prove our point, we then show the hole concentration profiles in the p-EBL/ the p-Al x Ga 1−x N heterojunction and p-GaN layer for VCSELs A, B1, B2, and B3 in Fig.…”

Section: Resultsmentioning

confidence: 89%

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

et al. 2022

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The hole injection capability is essentially important for GaN-based vertical cavity surface emitting lasers (VCSELs) to enhance the laser power. In this work, we propose GaN-based VCSELs with the p-AlGaN/p-GaN structure as the p-type hole supplier to facilitate the hole injection. The p-AlGaN/p-GaN heterojunction is able to store the electric field and thus can moderately adjust the drift velocity and the kinetic energy for holes, which can improve the thermionic emission process for holes to travel across the p-type electron blocking layer (p-EBL). Besides, the valence band barrier height in the p-EBL can be reduced as a result of usage of the p-AlGaN layer. Therefore, the better stimulated radiative recombination rate and the increased laser power are obtained, thus enhancing the 3 dB frequency bandwidth. Moreover, we also investigate the impact of the p-AlGaN/p-GaN structure with various AlN compositions in the p-AlGaN layer on the hole injection capability, the laser power, and the 3 dB frequency bandwidth.

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Section: Resultsmentioning

confidence: 89%

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

et al. 2022

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“…24,31) Furthermore, the impact ionization coefficients of electrons and holes in GaN material are represented by Chynowesh's equation, and are shown in Eqs. ( 1) and (2) 18,32) ( )…”

Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

“…16) The BV is also influenced by the image force at the Schottky contact region, which leads to the energy band lowering effect and increases the leakage current. 17,18) The very strong electric field at the Schottky contact region will also trigger trap-assisted tunneling that will further increase the leakage current. 19,20) Then, a trench metal-insulator-semiconductor barrier-controlled Schottky (TMBS) rectifier is proposed to avoid premature breakdown by suppressing the image force and decreasing the trapassisted tunneling process.…”

Section: Introductionmentioning

confidence: 99%

Investigation into the impact of bulk defects in the drift layer on the electrical properties of GaN-based trench Schottky barrier diodes

Gao,

He,

Huang

et al. 2024

Jpn. J. Appl. Phys.

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By using numerical simulation tools, this work has systematically investigated the impact of bulk defects in the drift layer on GaN-based trench MIS barrier-controlled Schottky (TMBS) rectifiers. Investigations show that in the forward conduction, the acceptor-type defects significantly increase the on-resistance (Ron.sp). When the device is in reverse blocking mode, donor-type defects tend to weaken the charge-coupling effect, leading to early breakdown of the device, while acceptor-type defects show the opposite feature. In addition, our report identifies that the reverse blocking effect is significantly impacted when the position for the defects is located in the region with maximum electric field magnitude. We also find that the acceptor-type traps will generate remarkable charging/discharging effect, which will destabilize the dynamic forward conduction process. Hence, we numerically prove that bulk defects shall be avoided in actual power diodes.

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On the impact of the beveled mesa for GaN-based micro-light emitting diodes: electrical and optical properties

Hang¹,

Gai²,

Chu³

et al. 2022

Opt. Express

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In this report, the impact of different mesa designs on the optical and electrical characteristics for GaN-based micro-light emitting diodes (µLEDs) has been systematically and numerically investigated by using TCAD simulation tools. Our results show that an enhanced light extraction efficiency can be obtained by using beveled mesas. The inclined mesa angles can more effectively reflect the photons to the substrate, and this helps to extract the photons to free air for flip-chip µLEDs. However, it is found that the current injection is influenced by inclination angles for the investigated µLEDs, such that the beveled mesas make stronger charge-coupling effect and increase the electric field magnitude in the multiple quantum wells at the mesa edge, so that the carriers cannot be effective consumed by radiative recombination. As a result, this gives rise to stronger defect-induced nonradiative recombination at mesa surfaces. Therefore, there are tradeoffs between the LEEs and IQEs when changing the beveled angle, to maximize external quantum efficiency for GaN-based µLEDs, the beveled mesa angle shall be carefully designed and optimized.

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Advances of beveled mesas for GaN-based trench Schottky barrier diodes

Cited by 5 publications

References 46 publications

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

Investigation into the impact of bulk defects in the drift layer on the electrical properties of GaN-based trench Schottky barrier diodes

On the impact of the beveled mesa for GaN-based micro-light emitting diodes: electrical and optical properties

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