Advances in the design and assembly of flexible thermoelectric device

Cao, Tianyi; Shi, Xiao‐Lei; Chen, Zhigang

doi:10.1016/j.pmatsci.2022.101003

Cited by 183 publications

(108 citation statements)

References 607 publications

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“…Thermally, reduction of κ l is commonly realized by introducing structural and lattice imperfections to reinforce phonon scatterings. 7,8 In this scenario, structural chemistry and defect chemistry are very helpful to create novel nanostructures and lattice imperfections, serving as the phonon scattering centers. 9−11 Likewise, chemistry has essentially benefited the development of GeTe thermoelectrics.…”

Section: Introductionmentioning

confidence: 99%

“…A profound understanding of the atomic orbital characters based on the molecular orbital theory provides hints to refine the band structures. Thermally, reduction of κ l is commonly realized by introducing structural and lattice imperfections to reinforce phonon scatterings. , In this scenario, structural chemistry and defect chemistry are very helpful to create novel nanostructures and lattice imperfections, serving as the phonon scattering centers. − …”

Section: Introductionmentioning

confidence: 99%

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Chemistry in Advancing Thermoelectric GeTe Materials

Hong

Chen

2022

Acc. Chem. Res.

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Metrics & MoreArticle Recommendations CONSPECTUS:The ever-growing energy crisis and the deteriorated environment caused by carbon energy consumption motivate the exploitation of alternative green and sustainable energy supplies. Because of the unique advantages of zero-emission, no moving parts, accurate temperature control, a long steady-state operation period, and the ability to operate in extreme situations, thermoelectrics, enabling the direct conversion between heat and electricity, is a promising and sustainable option for power generation and refrigeration. However, with increasing application potentials, thermoelectrics is now facing a major challenge: developing high-performance, Pb-free, and lowtoxic thermoelectric materials and devices.As one group of promising candidates, GeTe derivatives have the potential to replace the widely used thermoelectric materials containing highly toxic elements.In this Account, we summarize our recent progress in developing highperformance GeTe-based thermoelectric materials via exploring innovative strategies to enhance electron transports and dampen phonon propagations. First, we fundamentally illustrate the underlying chemistry and physical reason for an intrinsically high carrier concentration in GeTe, which enormously restrains the thermoelectric performance of GeTe. From our theoretical calculations, the formation energy of Ge vacancy is the lowest among the defects in GeTe, energetically favoring Ge vacancies in the lattice and leading to intrinsically high carrier concentrations. Accordingly, aliovalent doping/alloying is proposed to increase the formation energy of Ge vacancies and decrease the carrier concentration to the optimal level. We then outline the newly developed method to refine the band structures of GeTe with tuned electronic transport. On the basis of the molecular orbital theory, the energy offset between two valence band edges at the L and Σ points in GeTe should be ascribed to the slightly different Ge_4s orbital characters at these two points, which guides the screening of dopants for band convergence. Besides, the Rashba spin splitting is explored to increase the band degeneracy of GeTe. Afterward, we analyze the dampened phonon propagation in GeTe to minimize its lattice thermal conductivity. Alloying with the heavy Sb atoms can shift the optical phonon modes toward low frequency and reinforce the interaction of optical and acoustic phonon modes so that the inherent phonon scattering is enhanced. In addition, planar vacancies and superlattice precipitates can significantly strengthen phonon scattering to result in ultralow lattice thermal conductivity. After that, we overview the finite elemental analysis simulations to optimize the device geometry for maximizing the device performance and introduce the as-developed prototype GeTe-based thermoelectric device. In the end, we point out future directions in the development of GeTe for device applications. The strategies summarized in this Account can serve as references for developing wide materi...

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Chemistry in Advancing Thermoelectric GeTe Materials

Hong

Chen

2022

Acc. Chem. Res.

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“…Thermoelectric (TE) materials are attracting increasing attention in the materials research community as they allow for the direct conversion of waste heat into electricity, thereby improving the overall efficiency of power generation [ 1 , 2 , 3 , 4 ]. Typically, thermoelectric devices have been so far based on inorganic compounds, but also hybrid (organic-inorganic) TE materials have recently attracted the attention of many, in both the academic and industrial fields [ 5 , 6 , 7 , 8 , 9 ]. Indeed, considering the exponential increase in energy consumption, the possibility to recover electrical energy directly from lower-temperature waste heat using hybrid materials may represent a crucial advantage over inorganic ones [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

Long-Term Stability of TiS2–Alkylamine Hybrid Materials

et al. 2022

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Layered TiS2 intercalated with linear alkylamines has recently attracted significant interest as a model compound for flexible n-type thermoelectric applications, showing remarkably high power factors at room temperature. The thermal and, particularly, environmental stability of such materials is, however, a still an open challenge. In this paper, we show that amine-intercalated TiS2 prepared by a simple mechanochemical process is prone to chemical decomposition through sulfur exsolution, and that the presence of molecular oxygen is likely to mediate the decomposition reaction. Through computational analysis of the possible reaction pathways, we propose that Ti-N adducts are formed as a consequence of amine groups substituting for S vacancies on the internal surfaces of the S-Ti-S layers. These findings provide insights for possible future applications of similar hybrid compounds as devices operating in ambient conditions, and suggest isolating them from atmospheric oxygen.

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“…In recent years, most research efforts have been done on p-and ntype HH compounds, such as MNiSn, MCoSb (M = Ti, Zr, Hf) and RFeSb (R = V, Nb), and a high ZT of ∼1.0 at 1000 K has been achieved for both n-type and p-type HH compounds. 17,18 The pristine NbFeSb compound, one representative 18-electron HH compound, has been of signicant interest for its high power factor (PF; S 2 s) originating mainly from the combination of large S and moderate s. This indicates that the HH compounds usually exhibit excellent electrical properties. However, since the valence bands of NbFeSb show more promising TE properties than the conduction bands, the best TE properties of NbFeSb-based compounds occur in the p-type form, such as (Nb 1−x Ta x ) 0.8 Ti 0.2 FeSb obtained by defect engineering.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, most research efforts have been done on p- and n-type HH compounds, such as MNiSn, MCoSb (M = Ti, Zr, Hf) and RFeSb (R = V, Nb), and a high ZT of ∼1.0 at 1000 K has been achieved for both n-type and p-type HH compounds. 17,18 The pristine NbFeSb compound, one representative 18-electron HH compound, has been of significant interest for its high power factor (PF; S 2 σ ) originating mainly from the combination of large S and moderate σ . This indicates that the HH compounds usually exhibit excellent electrical properties.…”

Section: Introductionmentioning

confidence: 99%