Advances in the deposition of microcrystalline silicon at high rate by distributed electron cyclotron resonance

Cabarrocas, Pere Roca i; Bulkin, Pavel; Daineka, D.; Dao, T.; Leempoel, P.; Descamps, P.; Meerendré, T. Kervyn de; Charliac, J.

doi:10.1016/j.tsf.2007.12.067

Cited by 23 publications

(13 citation statements)

References 33 publications

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“…1. The SE results were fitted using the Bruggeman effective medium approximation and modeled with a three layer optical model [1]: an interface layer (IL) directly on the substrate, a bulk layer (BL) and a top surface layer (TSL), using a linear regression method [7]. Published dielectric functions for polycrystalline silicon with fine grains [8] were used for reference dielectric functions of c-Si, while for a-Si:H, functions described in Ref.…”

Section: Resultsmentioning

confidence: 99%

“…The RF (13.56 MHz) power supply was used to control the energy of the ions striking the surface [1]. The arrangement of separate microwave power and RF generator permits an independent and remote control of the plasma electron density (by varying the P MW ) and the energy of the ions striking the surface (by RF power applied to the substrate holder).…”

Section: Methodsmentioning

confidence: 99%

“…1 Introduction Matrix distributed electron cyclotron resonance (MDECR) silane plasma allows the fabrication of microcrystalline silicon (µc-Si:H) at very high rates on large areas, making it a potential choice for industrial production of intrinsic µc-Si:H layers for solar cell applications [1,2]. The microstructure of the µc-Si:H films is influenced by many different deposition parameters like pressure, temperature, microwave power, gas flow, etc.…”

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confidence: 99%

“…The microstructure of the µc-Si:H films is influenced by many different deposition parameters like pressure, temperature, microwave power, gas flow, etc. [1][2][3]. The intrinsic (i) layer of µc-Si:H material deposited in the transition region from amorphous to microcrystalline is known to yield better cell efficiency [4], while different microstructural features may be advantageous for the interface surfaces in the solar cell device [4,5].…”

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confidence: 99%

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Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system

Ram

Kroely

Kasouit

et al. 2010

Phys. Status Solidi (c)

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The structural and optoelectronic properties of undoped hydrogenated microcrystalline silicon (μ c‐Si:H) films deposited in a matrix distributed electron cyclotron resonance (MDECR) plasma CVD system using pure silane were studied as a function of microwave power (PMW) and gas pressure (Pgas). The analysis of the silane plasma optical emission spectra (OES) shows the effect of the deposition conditions on the plasma chemistry and resulting film microstructure as studied by spectroscopic ellipsometry and atomic force microscopy. The use of the PMW and Pgas as tunable parameters to achieve μ c‐Si:H films with desired microstructure is discussed. Intrinsic μ c‐Si:H films with good phototransport properties were realized at high deposition rate. Our study shows the usefulness of OES as a fast diagnostic tool for controlling and optimizing the μ c‐Si:H deposition process in MDECR reactor. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system

Ram

Kroely

Kasouit

et al. 2010

Phys. Status Solidi (c)

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“…15,63 Application of an ERFSB during the growth of lc-Si:H by means of the remote matrix distributed electron cyclotron resonance (MDECR) plasma resulted in a film densification at low jV dc j (<15 V) and reduced grain size at higher jV dc j. 64,65 That the optimum material properties by MDECRþERFSB are obtained at lower jV dc j compared to ETPþERFSB, is due to the higher plasma potential (Table I).…”

Section: On the Role Of Ionsmentioning

confidence: 99%

Ion-induced effects on grain boundaries and a-Si:H tissue quality in microcrystalline silicon films

Bronneberg

Cankoy

Sanden

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Microcrystalline silicon films have been deposited by means of the remote expanding thermal plasma. The effect of ion bombardment on the microcrystalline silicon film properties has been investigated by applying an RF bias to the deposition substrate. The application of the RF substrate bias resulted in the formation of an additional plasma in front of the substrate holder. Neither the SiH 4 depletion nor the growth flux was significantly enhanced upon substrate biasing, which suggests that (the composition of) the growth precursor flux is unaffected and that the ion-film interaction mechanisms were responsible for the observed material changes. Moderate bias conditions (i.e., dc bias voltages up to $70 V) led to an improved grain boundary passivation and densification of the amorphous silicon tissue, as concluded from the analysis of the infrared Si-H x stretching modes. These improvements have been ascribed to ion-induced Si surface atom displacement, which enhances the surface diffusion length of the growth precursors. More-energetic ion bombardment (i.e., under applied dc bias voltages of $60 V and higher) resulted in enhanced (di)vacancy incorporation via ion-induced Si bulk atom displacement. The film crystallinity was found not to be affected by the ion bombardment, although a reduced crystallite size was observed under ion bombardment conditions where Si bulk displacement had been sufficiently activated. The extent of the ion-film interaction mechanism has been enhanced...

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Effect of ion energy on structural and electrical properties of intrinsic microcrystalline silicon layer deposited in a matrix distributed electron cyclotron resonance plasma reactor

Ram

Kroely

Bulkin

et al. 2010

Physica Status Solidi (a)

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Microcrystalline silicon films were deposited in a matrix distributed electron cyclotron resonance (MDECR) plasma enhanced chemical vapor deposition (PECVD) system using pure silane, under varying substrate bias conditions. Microstructural characterization of the films shows a lower void fraction and a preponderance of nanograins in films deposited at negative bias, while in positive bias a thin incubation layer is seen with a higher void fraction. Plasma emission studies reveal higher electron temperature and more atomic H at positive bias, which lead to early onset of crystallization. The microstructural properties of the films are correlated with the dark and phototransport properties. Our study demonstrates the importance of substrate bias in controlling the ion energy and properties of films deposited in the MDECR reactor.

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Advances in the deposition of microcrystalline silicon at high rate by distributed electron cyclotron resonance

Cited by 23 publications

References 33 publications

Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system

Plasma emission diagnostics during fast deposition of microcrystalline silicon thin films in matrix distributed electron cyclotron resonance plasma CVD system

Ion-induced effects on grain boundaries and a-Si:H tissue quality in microcrystalline silicon films

Effect of ion energy on structural and electrical properties of intrinsic microcrystalline silicon layer deposited in a matrix distributed electron cyclotron resonance plasma reactor

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