Advances in the application of modulation spectroscopy to vertical cavity structures

Hosea, T. J. C.

doi:10.1016/j.tsf.2003.10.040

Cited by 28 publications

(47 citation statements)

References 27 publications

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“…For both the PR and SPS measurements, [6][7][8][9] light from a 100 W quartz tungsten halogen lamp, located at the primary entrance slit of a multipleport 0.32 m monochromator system, was dispersed with a 10 nm band pass and used as the probe beam focused onto the sample surface. All focusing was performed with off-axis parabolic aluminum mirrors.…”

Section: Methodsmentioning

confidence: 99%

An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques

Sharma

Hosea

Sweeney

2008

Journal of Applied Physics

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InAs/InGaAs/InP quantum dots ͑QDs͒ emitting at ϳ2 m for midinfrared laser applications are studied using the complementary spectroscopic techniques of photoluminescence ͑PL͒, photoreflectance ͑PR͒, and surface photovoltage spectroscopy ͑SPS͒. We use a procedure that ensures that the same sample spot is studied virtually simultaneously by these three different spectroscopic techniques under almost identical conditions. We are able to measure the ground and excited states transitions of the InAs QDs without any ambiguity, thus providing a complete and clear understanding of the electronic transitions. Temperature dependent PL, SPS, and PR measurements provide a systematic thermal evolution of the ground and excited states. However, the QD transitions are not all seen together at any given temperature in either the PL or SPS measurements. By contrast, the PR technique can measure the complete set of ground and two excited state QD transitions and also the InGaAs barrier energy at all studied temperatures.

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Section: Methodsmentioning

confidence: 99%

An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques

Sharma

Hosea

Sweeney

2008

Journal of Applied Physics

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“…7, temperature-variation PR spectroscopy was used to characterize both samples. PR is well known as a non-destructive, contactless, and yet most sensitive spectroscopic technique.…”

Section: Sample and Experimental Detailsmentioning

confidence: 99%

“…In essence PR externally modulates the complex dielectric function, e 1 þ ie 2 , of the sample using a chopped laser pump source which in turn modulates the sample reflectivity R. Since one normally measures R and DR simultaneously in PR, then in VCSEL structures PR can give not only a direct determination of E CM from the R spectrum, but may also allow the QW ground-state transition energy E QW to be measured, or inferred by varying some external parameter, thus revealing the extent of alignment of E CM and E QW -an attribute very important to successful device operation. 7 To establish the basic optical characteristics of the samples, a series of room temperature (RT) reflectivity spectra were measured on sample A as a function of incidence angle, h, ranging from 21 to 85 using a single-grating spectrometer, tungsten filament lamp, lock-in amplifier and cooled InSb detector. A mechanical chopper set at 333 Hz was placed in front of the spectrometer exit slit.…”

Section: Sample and Experimental Detailsmentioning

confidence: 99%

“…7 with the samples held in a closed-cycle helium cryostat for later cooling but at a fixed incidence angle of 45 6 5 . The samples were modulated with an 808 nm, 450 mW GaAlAs diode laser electrically chopped at 812 Hz.…”

Section: Sample and Experimental Detailsmentioning

confidence: 99%

“…The technique we use, photo-modulated reflectance (PR), is well known as a powerful non-destructive, non-contact method of studying the E CM /E QW alignment in VCSEL structures and is unique in potentially being able to directly monitor the QW transition energies of a full VCSEL structure. 7 In devices, the degree of this alignment is often referred to as gain-cavity tuning. We use PR as function of both incident angle and temperature to study this tuning.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

Chai

Hosea

Fox

et al. 2014

Journal of Applied Physics

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We report angle dependent and temperature dependent (9 K-300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 lm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 6 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices. V C 2014 AIP Publishing LLC.

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Advances in photoreflectance characterisation of photonic (resonant‐cavity) and transistor epiwafers

Murtagh¹,

Ward²,

Kelly³

2005

Physica Status Solidi (a)

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Advances in the application of non-contact photoreflectance (PR) spectroscopy to the characterisation of epiwafer device materials are presented. The study examines both vertical cavity surface emitting laser (VCSEL) and heterojunction bipolar transistor (HBTs) device structures. Emphasis is placed on the technologically important applications of VCSEL device material characterisation, for which PR offers the only true non-destructive testing capability, as well as upon the measurement of electric fields in device epiwafers for rf application transistors such as HBTs. This paper demonstrates the application of nondestructive and rapid techniques for evaluation and control of compound semiconductor materials for both VCSEL and HBT technology.

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Advances in the application of modulation spectroscopy to vertical cavity structures

Cited by 28 publications

References 27 publications

An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques

An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques

Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

Advances in photoreflectance characterisation of photonic (resonant‐cavity) and transistor epiwafers

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