Advances in Photoelectric Detection Units for Imaging Based on Perovskite Materials

Abstract

As an excellent representative of a new generation of semiconductor materials, perovskite materials are sweeping the whole photoelectric field like a storm (such as photovoltaic, electroluminescence, photoelectric detection and imaging, memristor, thermoelectricity, and other fields). In the field of photoelectric detection and imaging, perovskite materials show unique and excellent application potential of photoelectric detection and imaging. This paper overviews the recent advances of photoelectric detection units (PDUs) based on perovskite materials for imaging. First, the key characteristics and indexes of perovskite materials and PDUs are introduced. Then, the PDUs of conventional imaging in UV–vis–NIR band are introduced from organic–inorganic hybrid and all‐inorganic perovskite materials respectively. Then, the research of perovskite materials in X‐ray image detection and biological imaging is summarized. Finally, the application prospects of perovskite materials in PDUs imaging is discussed.

Perovskite single pixel imaging exceeding the visible towards X-ray and THz

“…Lead halide perovskites have emerged as a candidate material class, not only due to their wide spectral detection capability but also distinguished by their flexible compositions and remarkable photophysical properties, including high light absorption coefficient a (from 10 3 cm À1 to more than 10 5 cm À1 ), 47 balanced ambipolar charge mobility, 48 extended charge carrier diffusion length (175 mm), 49,50 and easily tunable bandgap (1.88 to 3.03 eV), [51][52][53] with versatile synthetic routes (from solution processing to allsolid and vapor processing). 54 Focused on photodetectors, perovskites have shown considerable progresses, demonstrating highly desirable attributes such as exceptional responsivity (R) exceeding 10 9 AW À1 , specific detectivity (D*) over 10 16 Jones, and the fastest response time about 1 ns, [55][56][57][58] etc., for visible photodetection, sensitivity up to 80 mC mGy air À1 cm À3 for X-ray detector based on MAPbBr 3 perovskite, 59 and a detection limit of 13 nGy air s À1 from a CsPbBr 3 perovskite material. 60 Specifically, Fig.…”

CMOS-Compatible Optoelectronic Imagers

“…The difficulty of integrating nonsilicon materials into silicon-integrated circuits has greatly hindered the development of Si-CMOS imagers beyond visible light. Emerging materials, such as inorganic-organic metal halide perovskites [24][25][26][27][28], organic polymers [19,29,30], and colloidal quantum dots (CQDs) [12,14,[31][32][33][34][35][36][37], can avoid complex flip-chip bonding processes to reduce the detector production cost and increase the portability of FPA readout circuit detectors. It is hoped that these emerging optoelectronic materials will contribute to solving the problem brought by traditional bulk materials and promote the application of infrared imagers.…”

β-CsHg2I5, a compound with rare [Hg2I5] dimers and large optical anisotropy

“…The development of both new functional materials and structural chemistry is highly dependent on the discovery of new compounds with distinctive structures and physiochemical properties. 1–6 Metal halides, with abundant structural diversities and adjustable optical performances, 7,8 are an important class of photoelectronic functional materials that are applied in the fields of photoelectric detection, 9,10 nonlinear optics (NLO), 11–14 infrared window materials, 15–17 new energy materials 18 and so on. Over the past decades, many metal halides with multiple structures and distinguished properties like CsGeQ 3 (Q = Br and I), 19,20 NaSb 3 F 10 , 21 and K 2 SbF 2 Cl 3 22 were rationally designed and fabricated experimentally by the high-temperature solid state/solution method or wet chemistry routes.…”