Materials for Infrared Detectors 2001
DOI: 10.1117/12.448175
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Advances in linear and area HgCdTe APD arrays for eyesafe LADAR sensors

Abstract: HgCdTe APDs and APD arrays offer unique advantages for high-performance eyesafe LADAR sensors. These include: operation at room temperature, low-excess noise, high gain, high-quantum efficiency at eyesafe wavelengths, GHz bandwidth, and high-packing density. The utility of these benefits for systems are being demonstrated for both linear and area array sensors. Raytheon has fabricated 32 element linear APD arrays utilizing liquid phase epitaxy (LPE), and packaged and integrating these arrays with low-noise amp… Show more

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Cited by 13 publications
(10 citation statements)
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“…Impact ionisation process is initiated at high reverse bias in these materials. Evacuation rate of charge carriers from the depletion region is also slow [8][9][10][11][12] . High excess noise factor (F) is reported in Si and III-V based materials due to the involvement of both type of carriers (electrons and holes) in the multiplication process.…”
Section: Iii-v Materials Based Irapdsmentioning
confidence: 99%
See 3 more Smart Citations
“…Impact ionisation process is initiated at high reverse bias in these materials. Evacuation rate of charge carriers from the depletion region is also slow [8][9][10][11][12] . High excess noise factor (F) is reported in Si and III-V based materials due to the involvement of both type of carriers (electrons and holes) in the multiplication process.…”
Section: Iii-v Materials Based Irapdsmentioning
confidence: 99%
“…Geiger mode APD has been used to perform photon detection application in the past. However, the recent advances in low noise amplifier design and device fabrication techniques for suppressing APD multiplication noise have led to the development of a new generation of linear mode single photon counting APD (linear SPAD) [5][6][7][8] . The high dark current and long dead times limit to the Geiger mode APD based LADAR seekers for detection of the incoming signals.…”
Section: Introductionmentioning
confidence: 99%
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“…The first type of HgCdTe APD [9] relies on a novelty in the energy band structure of HgCdTe with a bandgap of approximately 0.82 eV. Here the bandgap energy becomes equal to the energy separation between the top of the valence band and the split-off light-hole band below it.…”
Section: Avalanche Photodiodesmentioning
confidence: 99%