Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.
DOI: 10.1109/pvsc.2002.1190459
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Advances in high throughput wafer and solar cell technology for EFG ribbon

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Cited by 3 publications
(3 citation statements)
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“…We made two oral presentations at the 29 th IEEE PV Specialists conference, May 14- 21,2003, in New Orleans, summarizing the work done in our program, and these have been published in the Proceedings volume of the conference [2]. An oral program review of Phase II accomplishments was given at NREL on May 28, 2004.…”
Section: Program Scopementioning
confidence: 99%
“…We made two oral presentations at the 29 th IEEE PV Specialists conference, May 14- 21,2003, in New Orleans, summarizing the work done in our program, and these have been published in the Proceedings volume of the conference [2]. An oral program review of Phase II accomplishments was given at NREL on May 28, 2004.…”
Section: Program Scopementioning
confidence: 99%
“…Papers on this subcontract work were presented at the 29 th and 31st IEEE PV Specialists conferences summarizing the progress in our program, and these have been published in the Proceedings volume of the conferences. [2][3][4] Reviews of the progress of the R&D in our program were given at NREL, including papers at two NCPV DOE Program review meetings. [5][6][7] The work scope and work completed in individual tasks are described in detail below.…”
Section: Program Scopementioning
confidence: 99%
“…Long range targets call for cycle times to be reduced to the order of 1-1.5 seconds for 12.5 cm x 12.5 cm wafers-using the same basic technology set existing today, with the necessary modifications to obtain the faster cycle times-resulting in single line capacities exceeding 50 MW/yr. [2] The specifications which set the wafer transfer/cycle times for the processing equipment simultaneously constrain diagnostic tools which are to be used on-line if parameters are to be monitored on a continuous basis. It has been found that, in general, the cell line can be maintained without needing to continuously monitor wafer or cell properties per se; rather, process parameters such as temperatures, relative humidity, water flows, chemical flows, and air pressures are what need to be continuously monitored to maintain process control on the line.…”
Section: Si Wafer Probe Top Viewmentioning
confidence: 99%