Advances in half-Heusler alloys for thermoelectric power generation

Quinn, Robert J.; Bos, Jan‐Willem G.

doi:10.1039/d1ma00707f

Cited by 132 publications

(101 citation statements)

References 237 publications

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“…High temperature normalised ρ(T)/ρ 300 K data for selected compositions from the main HH families are plotted in figure 4. Normalisation of the data allows for the temperature dependence to be examined and longitudinal velocities of sound (v l ) can be found in [2]. The deformation potential (E def ) was obtained using equation (8).…”

Section: Analysis Of High-temperature Resistivity Data For a Range Of...mentioning

confidence: 99%

“…Semiconducting half-Heusler (HH) phases are promising candidates for thermoelectric applications, boasting high power factors, mechanical stability and high abundance constituent elements [1][2][3][4][5][6]. Accurate determination of the electronic scattering mechanism is important because it can provide guidance on optimisation, by promoting phonon scattering, while charge carrier scattering is suppressed [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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Electronic scattering in half-Heusler thermoelectrics from resistivity data

2022

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A key part of optimising thermoelectric materials is understanding the electronic scattering mechanism. For half-Heusler thermoelectrics, the dominant mechanisms are acoustic phonon scattering in pure systems and alloy scattering in highly alloyed systems. In this report, the significance of the residual resistivity ρ0 is highlighted. Large ρ0 values can lead to misidentification of the dominant scattering mechanism when only high-temperature ρ(T) data is available. A straightforward approach to analyse ρ(T) is proposed and applied to a range of HH systems. This reveals large levels of structural disorder in XIVNiSn, whilst XVFeSb has the strongest coupling with acoustic phonons. The electronic scattering mechanism depends sensitively on composition, with acoustic (∝T1.5), metallic (∝T1) and alloy (∝T0.5) scattering observed within the main families of half-Heusler compounds. With the aid of velocity of sound, band mass and carrier concentration data, the deformation potential can be obtained, enabling quantification of the interaction between phonons and carriers, from fits to resistivity data. This work provides a route for the analysis of experimental ρ(T) data that can be applied to a range of thermoelectric materials.

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Section: Analysis Of High-temperature Resistivity Data For a Range Of...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electronic scattering in half-Heusler thermoelectrics from resistivity data

2022

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“…Half-Heusler (HH, general formula: XYZ) materials have been extensively researched for their potential as thermoelectric materials as well as their prospective usage in spintronics and magnetic applications. [1][2][3] The exible compositional variety provides extra degrees of freedom to tune the electronic and phonon structures which is suitable for tailoring the thermoelectric properties. [1][2][3] Thus, Heusler compounds also serve as a playground for studying the long-range and short-range orders, disorders, and a variety of defects.…”

Section: Introductionmentioning

confidence: 99%

Discovery of triple half-Heusler Mg₂VNi₃Sb₃ with low thermal conductivity

et al. 2022

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“…5 There is a revival of interest in improving the efficiency of TE materials around the world, with focus on maximizing power factor, PF (= S 2 /ρ) and lowering κ. 6 Doping, 7 alloying, 8 and nanostructuring 9 are generally considered as a route to greatly improve thermo-electric parameters by optimizing carrier concentration (n H ) and/or introducing additional scattering for phonons.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi ₂ Te ₃

Singha

Das

Kulbashinskii

et al. 2022

Intl J of Energy Research

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We report the enhancement of electron mobility and power factor for 3D topological insulator Bi 2 Te 3 with Cobalt (Co) doping. Thermal variation of resistivity (ρ), thermopower (S), carrier concentration (n H ), magneto-resistance (MR), and magnetization measurements have been performed on synthesized Cobalt-doped n-type Bi 2 Te 3 , viz., Bi 2Àx Co x Te 3 (x = 0, 0.05, and 0.1) samples. Theoretical simulation of electrical and thermal transport parameters has been done in the frame of the Boltzmann equation approach and shows satisfactory agreement with experimental results. The thermoelectric performance, as estimated through power factor is found to increase with Co doping, with an enhancement of $47% is observed for Bi 1.9 Co 0.1 Te 3 sample. The positive linear MR and nearly cusp like behaviour at low field and low temperature confirms the presence of weak anti-localization (WAL) effects in pristine and Co-doped Bi 2 Te 3 samples. The field-dependent magnetization showing a cusp-like nature in the susceptibility data around zero field regions signifies the existence of topological surface state (TSS). MR along with magnetization data confirms the robustness of TSS with Co doping.

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Advances in half-Heusler alloys for thermoelectric power generation

Abstract: Half-Heusler alloys are leading candidate materials for large scale thermoelectric power generation. In the past decade, substantial improvements have been made to the established n-types based on XIVNiSn, and exciting...

Cited by 132 publications

References 237 publications

Electronic scattering in half-Heusler thermoelectrics from resistivity data

Electronic scattering in half-Heusler thermoelectrics from resistivity data

Discovery of triple half-Heusler Mg₂VNi₃Sb₃ with low thermal conductivity

Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi ₂ Te ₃

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Advances in half-Heusler alloys for thermoelectric power generation

Abstract: Half-Heusler alloys are leading candidate materials for large scale thermoelectric power generation. In the past decade, substantial improvements have been made to the established n-types based on XIVNiSn, and exciting...

Cited by 132 publications

References 237 publications

Electronic scattering in half-Heusler thermoelectrics from resistivity data

Electronic scattering in half-Heusler thermoelectrics from resistivity data

Discovery of triple half-Heusler Mg2VNi3Sb3 with low thermal conductivity

Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi 2 Te 3

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Product

Resources

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Discovery of triple half-Heusler Mg₂VNi₃Sb₃ with low thermal conductivity

Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi ₂ Te ₃