Advances and Challenges in Developable Bottom Anti-Reflective Coating (DBARC)

Kudo, Takanori; Chakrapani, Srinivasan; Dioses, Alberto; Ng, Edward W.; Antonio, Charito; Parthasarathy, Deepa; Miyazaki, Syuji; Yamamoto, Kuniharu; Akiyama, Yukio; Collett, Richard; Neisser, Mark; Padmanaban, Murirathna

doi:10.2494/photopolymer.23.731

Cited by 6 publications

(4 citation statements)

References 6 publications

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“…The DBARC formulations were prepared by dissolving a hydroxyl polymer, a crosslinker and a photoacid generator in a solvent and the general structure is shown in Fig. 1 [19] 248 nm resist formulations were chemically amplified resists consisting of partially protected hydroxystyene type polymer, a photoacid generator, an acid quencher and a casting solvent [20]. For 193 nm resist formulations, an alicyclic methacrylate/acrylate polymer was used instead of the hydroxystyrene polymer [21][22].…”

Section: Methodsmentioning

confidence: 99%

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PAG and Quencher Effects on DBARC Performance

Padmanaban

Kudo

Chakrapani

et al. 2011

J. Photopol. Sci. Technol.

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Section: Methodsmentioning

confidence: 99%

“…The transmittance of DBARC is low, similar to ARC, but the photoreaction needs to complete all the way to the bottom. Moreover, similar to a chemically amplified resist, interaction of DBARC with a resist and/or with the substrate brings the new challenges described previously [19] and highlighted below.…”

mentioning

confidence: 99%

PAG and Quencher Effects on DBARC Performance

Padmanaban

Kudo

Chakrapani

et al. 2011

J. Photopol. Sci. Technol.

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“…The work on developing advanced photosensitive DBARCs (PS-DBARCs) for via patterning to realize these strengths has continued (12,13). Features down to 80 nm have been shown with straight profiles.…”

Section: Dual Damascene Processesmentioning

confidence: 99%

Use of DBARCs Beyond Implant

Washburn

Lowes²,

Guerrero³

2011

ECS Trans.

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Almost a decade ago, the integrated circuit (IC) industry realized that traditional implant layers required new technology to achieve the specifications of the shrinking design rules and increased topography effects. In response, developer-soluble bottom antireflective coatings (DBARCs) were introduced as a solution. DBARCs offered the resolution and critical dimension (CD) control needed for the increasingly critical implant layers.In this paper the benefits DBARCs can bring to other lithographic processes are reviewed. Back-end-of-line (BEOL) dual damascene processes are surveyed. Front-end-of-line (FEOL) processes are examined, including high-k metal gate (HKMG), double patterning, and spacer. All processes are defined, and the value that a DBARC brings to each process is examined, along with potential challenges.

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“…To avoid the plasma etching of the BARC layer, significant efforts have been devoted to the research on developable BARCs (DBARCs) [29][30][31]. DBARCs are developersoluble-polymer based anti-reflective coatings.…”

Section: Introductionmentioning

confidence: 99%

Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography

et al. 2020

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In this manuscript, we demonstrate the potential of replacing the standard bottom anti-reflective coating (BARC) with a polymethylglutarimide (PMGI) layer for wafer-scale nanofabrication by means of deep-UV displacement talbot lithography (DTL). PMGI is functioning as a developable non-UV sensitive bottom anti-reflective coating (DBARC). After introducing the fabrication process using a standard BARC-based coating and the novel PMGI-based one, the DTL nanopatterning capabilities for both coatings are compared by means of the fabrication of etched nanoholes in a dielectric layer and metal nanodots made by lift-off. Improvement of DTL capabilities are attributed to a reduction of process complexity by avoiding the use of O2 plasma etching of the BARC layer. We show the capacity of this approach to produce nanoholes or nanodots with diameters ranging from 95 to 200 nm at a wafer-scale using only one mask and a proper exposing dose. The minimum diameter of the nanoholes is reduced from 118 to 95 nm when using the PMGI-based coating instead of the BARC-based one. The possibilities opened by the PMGI-based coating are illustrated by the successful fabrication of an array of nanoholes with sub-100 nm diameter for GaAs nanowire growth on a 2″ GaAs wafer, a 2″ nanoimprint lithography (NIL) master stamp, and an array of Au nanodots made by lift-off on a 4″ silica wafer. Therefore, DTL possess the potential for wafer-scale manufacturing of nano-engineered materials.

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Advances and Challenges in Developable Bottom Anti-Reflective Coating (DBARC)

Cited by 6 publications

References 6 publications

PAG and Quencher Effects on DBARC Performance

PAG and Quencher Effects on DBARC Performance

Use of DBARCs Beyond Implant

Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography

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