Advancements in Light Management for Thin-Film Space Photovoltaics

D'Rozario, Julia R.; Polly, Steve J.; Tatavarti, Rao; Hubbard, Seth M.

doi:10.1109/pvsc43889.2021.9518582

Cited by 2 publications

(3 citation statements)

References 9 publications

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“…Therefore, nonradiative surface recombination at the perimeter sidewall becomes one of the most important loss mechanisms limiting the IQE. ,, Over the past few decades, various strategies have been developed to combat perimeter recombination. Examples include chalcogenide-based wet-chemical passivation, − field-effect dielectric passivation, , wet-chemical or plasma nitridation, , and epitaxial regrowth . However, all of these methods require complex processing techniques or nonstandard equipment and suffer from poor longevity or incomplete passivation.…”

Section: Introductionmentioning

confidence: 99%

“…Examples include chalcogenide-based wet-chemical passivation, 16 − 18 field-effect dielectric passivation, 19 , 20 wet-chemical or plasma nitridation, 21 , 22 and epitaxial regrowth. 23 However, all of these methods require complex processing techniques or nonstandard equipment and suffer from poor longevity or incomplete passivation.…”

Section: Introductionmentioning

confidence: 99%

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Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling

van der Krabben,

Gruginskie,

van Eerden

et al. 2024

ACS Appl. Electron. Mater.

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III−V semiconductor light-emitting diodes (LEDs) are a promising candidate for demonstrating electroluminescent cooling. However, exceptionally high internal quantum efficiency designs are paramount to achieving this goal. A significant loss mechanism preventing unity internal quantum efficiency in GaAsbased devices is nonradiative surface recombination at the perimeter sidewall. To address this issue, an unconventional LED design is presented, in which the distance from the central current injection area to the device's perimeter is extended while maintaining a constant front contact grid size. This approach effectively moves the perimeter beyond the lateral spread of current at an operating current density of 10 1 −10 2 A/cm 2 . In p−i−n GaAs/InGaP double heterojunction LEDs fabricated with varying sizes and perimeter extensions, a 19% relative increase in external quantum efficiency is achieved by extending the perimeter-tocontact distance from 25 to 250 μm for a front contact grid size of 450 × 450 μm 2 . Utilizing an in-house developed Photon Dynamics model, the corresponding relative increase in internal quantum efficiency is estimated to be 5%. These results are ascribed to a significant reduction in perimeter recombination due to a lower perimeter-to-surface area (P/A) ratio. However, in contrast to lowering the P/A ratio by increasing the front contact grid size of LEDs, the present method enables these improvements without affecting the required maximum current density in the microscopic active LED area under the front contact grid. These findings aid in the advancement of electroluminescent cooling in LEDs and could prove useful in other dedicated semiconductor devices where perimeter recombination is limiting.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling

van der Krabben,

Gruginskie,

van Eerden

et al. 2024

ACS Appl. Electron. Mater.

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“…With a suitable light‐trapping scheme increasing the path length through the solar cell, the ultrathin structures can be made optically thick and achieve current‐densities matching those of conventional thin film (2–3 μm) GaAs cells 8–10 . Light‐managing structures in GaAs solar cells include front side nano‐structures like plasmonic scattering particles, 11 textured window layers, 12,13 and dielectrics, 14,15 as well as rear side scattering layers with metallic mirrors, like transferred textured substrates, 16 dielectric nanostructures, 17 gratings, 18 (anisotropically) etched III‐V layers, 19–22 and as‐grown surfaces 23,24 . However, none of these methods meet all the important criteria for light‐trapping structures that can be applied in large‐scale production, namely, simplicity, reproducibility, cost‐effectiveness, and close‐to‐zero parasitic absorption of high‐energy photons above the GaAs bandgap.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin GaAs solar cells with a high surface roughness GaP layer for light‐trapping application

Woude

Krabben

Bauhuis

et al. 2022

Progress in Photovoltaics

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By reducing the thickness of the absorber layers, ultrathin GaAs solar cells can be fabricated in a more cost-effective manner using less source material and shorter deposition times. In this work, ultrathin GaAs solar cells are presented with a diffuse scattering layer based on wide bandgap GaP grown directly on the device layers of the cells with MOCVD. The roughness and surface morphology are quantified using atomic force microscopy and the resulting diffuse scattering capability is assessed using wavelength-dependent reflectance measurements. Ohmic rear contacts are made using contact points etched through the GaP layer, for which an etching procedure using I 2 :KI was developed and optimized. The performance of the GaP textured ultrathin GaAs cells are compared with equivalent planar cells using current densityvoltage measurements and external quantum efficiency measurements, where the GaP textured cells demonstrate an increase of 6.7% in the short-circuit current density (J SC ), which was found to be as high as 21.9 mAÁcm À2 as a result of increased photon absorption by light-trapping.

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Advancements in Light Management for Thin-Film Space Photovoltaics

Cited by 2 publications

References 9 publications

Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling

Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling

Ultrathin GaAs solar cells with a high surface roughness GaP layer for light‐trapping application

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