Advancement of the Homogeneous Background Method for the Computational Simulation of Electrochemical Interfaces

Abstract

Computational studies of electrochemical interfaces based on density-functional theory (DFT) play an increasingly important role in present research on electrochemical processes for energy conversion and storage. The homogeneous background method (HBM) offers a straightforward approach to charge the electrochemical system within DFT simulations, but it typically requires the specification of the "active" fraction of excess electrons based on a certain choice of the electrode-electrolyte boundary location, which can be difficult in presence of electrode-surface adsorbates or explicit solvent molecules. In this work, we present a methodological advancement of the HBM, both facilitating and extending its applicability. The advanced version neither requires energy corrections nor the specification of the "active" fraction of excess electrons, providing a versatile and readily available method for the simulation of charged interfaces also when adsorbates or explicit solvent molecules are present. Our computational DFT