Advancement of CMOS Transimpedance Amplifier for Optical Receiver

Badal, Md. Torikul Islam; Reaz, Mamun Bin Ibne; Yeng, Lye Suet; Bhuiyan, Mohammad Arif Sobhan; Haque, Faiazul

doi:10.1007/s42341-018-00092-5

Cited by 12 publications

(5 citation statements)

References 63 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the on-chip front-end amplifier required to convert such small currents to voltage must achieve very large gain at the operating frequency, while the input-referred current noise is kept at a minimum to guarantee high-performance timing and highresolution [19]. Power consumption and chip area [20] should be also reduced as required for portable Lab-on-Chip (LoC) applications.…”

Section: Introductionmentioning

confidence: 99%

A 164-dBΩ Transimpedance Amplifier for Monolithic CMOS-MEMS Oscillators in Biosensing Applications

Perelló-Roig,

Barceló,

Verd

et al. 2024

IEEE Access

View full text Add to dashboard Cite

This article presents a fully differential tunable high-gain transimpedance amplifier (TIA) conceived as front-end circuit for monolithic CMOS-MEMS resonators operating in self-sustained oscillation mode. The proposed solution is based on a capacitive feedback network topology using a varactor for gain control. The design is specifically oriented to CMOS-MEMS biosensing applications that require post-CMOS MEMS processing. The adoption of a TIA solution provides robustness against one of such processing steps (i.e., oxygen plasma activation) and a 10 improvement in feedthrough signal elimination compared to a single-ended alternative. The ASIC was fabricated using a 0.35-µm commercial CMOS technology from Austria Microsystems featuring a maximum transimpedance gain of 164 dBΩ with a 10-dB tuning range. It operates at frequencies up to 10 MHz with an input-referred current noise density as low as 13 fA•Hz -1/2 providing an exceptional high-performance sensing. With a 3.3 V supply voltage, it exhibits a 1.6 mW power consumption. The presented TIA was integrated on-chip with various MEMS resonator topologies, either oriented to volatile organic compounds (VOCs) detection or to microfluidics integration for Lab-on-Chip (LoC) systems, corroborating self-sustained oscillation with a 135-ppb measured Allan deviation and 1.1 V output voltage swing.INDEX TERMS CMOS-MEMS oscillator, transimpedance amplifier (TIA), Lab-on-Chip (LoC), ASIC. TABLE I LIST OF ABBREVIATIONS AND ACRONYMS USED IN THIS WORK

show abstract

Section: Introductionmentioning

confidence: 99%

A 164-dBΩ Transimpedance Amplifier for Monolithic CMOS-MEMS Oscillators in Biosensing Applications

Perelló-Roig,

Barceló,

Verd

et al. 2024

IEEE Access

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6][7][8][9] Numerous circuits like current conveyors, 10 voltage-controlled oscillators, 11 linear regulators, 12,13 switchedcapacitor circuit, 14 low-dropout regulator 15 and liquid crystal display drivers, [16][17][18] micro-electromechanical system sensors, 19 multipliers 20 use OTA for implementing their functionality. Indeed, important circuits like programmable gain amplifiers, 21,22 variable gain amplifiers, 21 filters, [23][24][25] modulators, 26,27 and transimpedance amplifiers 28,29 use OTAs to form systems on chip. In such systems, OTA is expected to improve current utilization and reduce power consumption, noise and voltage requirements.…”

Section: Introductionmentioning

confidence: 99%

Design of low‐voltage low‐noise operational transconductance amplifiers for low frequency applications

Sharma,

Kumar,

Madan

et al. 2024

Int J Numerical Modelling

View full text Add to dashboard Cite

Low‐noise and low‐voltage operation is prime requirement of an operational transconductance amplifier for low frequency applications. However, achieving low‐noise operation at low supply voltages is a challenging task in CMOS technology owing to noise‐power and noise‐stability tradeoffs. This article outlines, the design of four differential bias self‐cascode (DBSC) operational transconductance amplifiers (OTAs) working at ±0.7 V. The four design techniques namely gate driven (GD), bulk driven (BD), bulk driven quasi‐floating gate (BDQFG), and gate driven quasi floating bulk (GDQFB) have been applied on DBSC OTAs. The designing aspects and performance parameters of these four OTAs such as gain, gain‐bandwidth, input referred noise (IRN), settling time (ST), common mode rejection ratio (CMRR), total harmonic distortion, input impedance, transconductance, power consumption, area consumption and process/mismatch variations have been fairly compared in this work. These DBSC OTAs have been designed and simulated using a standard 0.18‐μm 6M1P CMOS N‐well process. The results infer GD DBSC OTA shows high CMRR of 125.83 dB. While the BD DBSC OTA consumes very low power of 0.2 μW. The BDQFG DBSC OTA shows low 1% ST of 24.83 μS. The GDQFB DBSC OTA show high transconductance (2.35 mS), high gain (64.97 dB), and low IRN (0.40 μV/√Hz at 10 Hz). The theoretical predictions for these OTAs agree with the post‐layout simulations. The proposed OTAs can be used for designing various analog circuits such as programmable gain amplifiers, variable gain amplifiers, and transimpedance amplifiers for low‐frequency biomedical and health care applications.

show abstract

“…With the adaptation of the internet of things (IoT), battery-powered devices such as mobile phones, personal digital assistants (PDAs), and smartwatches are nowadays gaining much popularity around the world. Power management has become a more significant issue to improve a device's battery run-time, which necessitates efforts from the radio frequency integrated circuits' (RFIC) designers for efficient power management for the battery-operated electronic devices [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Electronics 2022, 11,193 2 of 32 more significant issue to improve a device's battery run-time, which necessitates efforts from the radio frequency integrated circuits' (RFIC) designers for efficient power management for the battery-operated electronic devices [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

CMOS Low-Dropout Voltage Regulator Design Trends: An Overview

et al. 2022

Self Cite

View full text Add to dashboard Cite

Systems-on-Chip’s (SoC) design complexity demands a high-performance linear regulator architecture to maintain a stable operation for the efficient power management of today’s devices. Over the decades, the low-dropout (LDO) voltage regulator design has gained attention due to its design scalability with better performance in various application domains. Industry professionals as well as academia have put forward their innovations such as event-driven explicit time-coding, exponential-ratio array, switched RC bandgap reference circuit, etc., to make a trade-off between several performance parameters such as die area, ripple rejection, supply voltage range, and current efficiency. However, current LDO architectures in micro and nanometer complementary metal–oxide–semiconductor (CMOS) technology face some challenges, such as short channel effects, gate leakage, fabrication difficulty, and sensitivity to process variations at nanoscale. This review presents the LDO architectures, optimization techniques, and performance comparisons in different LDO design domains such as digital, analog, and hybrid. In this review, various state-of-the-art circuit topologies, deployed for the betterment of LDO performance and focusing on the specific parameter up-gradation to the overall improvement of the functionality, are framed, which will serve as a comparative study and reference for researchers.

show abstract

Advancement of CMOS Transimpedance Amplifier for Optical Receiver

Cited by 12 publications

References 63 publications

A 164-dBΩ Transimpedance Amplifier for Monolithic CMOS-MEMS Oscillators in Biosensing Applications

A 164-dBΩ Transimpedance Amplifier for Monolithic CMOS-MEMS Oscillators in Biosensing Applications

Design of low‐voltage low‐noise operational transconductance amplifiers for low frequency applications

CMOS Low-Dropout Voltage Regulator Design Trends: An Overview

Contact Info

Product

Resources

About