Advanced Wire Bonding Technology: Materials, Methods, and Testing

Charles, Harry K.

doi:10.1007/978-3-319-45098-8_4

Cited by 9 publications

(11 citation statements)

References 26 publications

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“…Wire pull testing can indicate the weakest location in the low loop profile whereas the bonds and original wires are strong [45]. The average value of wire pull was 2.852 gf from 10 randomly selected large-span-ratio loops (>5) as shown in Figure 8g.…”

Section: Wire Bonding Strength Testmentioning

confidence: 99%

Rationally Designing the Trace of Wire Bonder Head for Large-Span-Ratio Wire Bonding in 3D Stacked Packaging

et al. 2020

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Section: Wire Bonding Strength Testmentioning

confidence: 99%

Rationally Designing the Trace of Wire Bonder Head for Large-Span-Ratio Wire Bonding in 3D Stacked Packaging

et al. 2020

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“…Figure shows the brief illustrations of the thermosonic wire bonding process [5]. Thermosonic wire usually has faster bonding speed (typically, about 10 wires/s) relative to that of ultrasonic wedge bonding (about 4 wires/s).…”

Section: Introductionmentioning

confidence: 99%

“…One of the main methods for making interconnections in microelectronics packaging is via thermosonic ball bonding [4][5][6][7]. By combination of heat, pressure and ultrasonic energy, a thin metal wire loop is welded to a metallic bond pad.…”

Section: Introductionmentioning

confidence: 99%

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Bond strength evaluation of heat treated Cu-Al wire bonding

Shariza

Anand

Warikh

et al. 2018

JMES

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Bond strength evaluation of wire bonding in microchips is the key study in any wire bonding mechanism. The quality of the wire bond interconnection relates very closely to the reliability of the microchip during performance of its function in any application. In many reports, concerns regarding the reliability of the microchip are raised due to formation of void at the wire-bond pad bonding interface, predominantly after high temperature storage (HTS) annealing conditions. In this report, the quality of wire bonds prepared at different conditions, specifically annealed at different HTS durations are determined by measurements of the strength of the interface between the bond wire and the bond pad. The samples are tested in pull test and bond shear test. It was observed that the higher bonding temperature as well as the longer duration of HTS increased the bond strength. This is represented through the analysis of the measurements of ball shear strength. This is due to the fact that higher bonding temperature and longer HTS promoted better growth of the Cu-Al IMC layer. A transmission electron microscopy - energy dispersive X-ray analysis (TEM-EDX) has been carried out to observe the formation of the Cu-Al IMC layer in the sample.

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“…The contact force is related to the out-of-plane stress, which is a potential factor leading to structural cracks and delamination (Shen et al, 2006;Yeo, 2017). Moreover, different loading rates in the contact stage are also a possible result of cracking (Toyozawa et al, 1990;Qin et al, 2011) However, there is no reliable instrumented testing methodology to correlate the control parameters of the wire-bonding process and the mechanical behavior and damage modes of the bond pad (Charles, 2016).…”

Section: Fig 22mentioning

confidence: 99%

Dynamic damage analysis of thin film stacked structures for microelectronic devices

Zhao¹

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In the context of the megatrends of remote working, the development of artificial intelligence, and electric vehicle applications, there is a great demand for betterperforming and multi-functional integrated circuit (IC) chips to fill the technology gaps.Moreover, the demand for package minimization and rapid production of power electronic products have raised a serious concern about the robustness of thin-film stacked structures in the bond pad of IC chips, especially in the processes of wirebonding, wafer probing, and die ejection.Recently, hard copper (Cu) wires have been widely applied to replace traditional soft gold (Au) wires in the wire-bonding process. It is not only because the price of Cu wires is more competitive than that of Au wires, but also Cu wires possess superior electrical, mechanical, and thermal properties over Au wires. However, the dynamic contact between the Cu free air ball (FAB) and the bond pad surface leads to excessive deformation and thus significant damage or failure in the brittle substrate beneath the top metallization pad of IC chips. Moreover, the damaged sites are invisible, which makes it difficult to predict their occurrences. Hence, this research aims to study the dynamic deformation and damage behavior of the thin-film stacked structure during high strain-rate indentation loading through experimental, statistical, and analytical methods.First, a dynamic strain-rate (DSR) model has been developed for analyzing the dynamic response of a thin-film stacked structure consisting of a top metallization layer (copper-titanium CuTi) and an intermediate dielectric layer (silicon nitride Si3N4) on the Si substrate at varying loading rates. In the DSR model, the exponential indentation strain rate-time history is established by maintaining the constant ratio of the Abstract X instantaneous loading rate to load (Ṗ/P) in the indentation tests. The relationship between the indentation strain rate and indentation strain at different Ṗ/P was analyzed for characterizing the DSR model. The indentation stress-strain curves at different testing protocols were plotted to investigate the rate-dependent behaviors of the thinfilm stacked structure. Second, DSR indentation tests integrated with the acoustic emission (AE) sensingtechnique were conducted on a Si (100) wafer to investigate the phase transformation at low and high Ṗ/P. The occurrence of phase transformation was detected by an AE event and corresponds to an onset load. It was found that high Ṗ/P leads to a decrease in the phase transformation threshold, which could be attributed to an increase in the shear stress with increasing strain rates. The activation volume V* for the onset of phase transformation was determined based on two methods of the strain rate sensitivity and the nucleation theory-based model. Both analysis methods yield comparable V* and well proximate the size of the nucleated β-Sn phase, suggesting that the phase transformation is predominantly induced by shearing under the non-hydrostatic condition. Moreover, an incre...

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Advanced Wire Bonding Technology: Materials, Methods, and Testing

Cited by 9 publications

References 26 publications

Rationally Designing the Trace of Wire Bonder Head for Large-Span-Ratio Wire Bonding in 3D Stacked Packaging

Rationally Designing the Trace of Wire Bonder Head for Large-Span-Ratio Wire Bonding in 3D Stacked Packaging

Bond strength evaluation of heat treated Cu-Al wire bonding

Dynamic damage analysis of thin film stacked structures for microelectronic devices

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