Advanced VLS growth of gold encrusted silicon nanowires Mediated by porous Aluminium Oxide template

Deepu, Bagur R.; Anil, Seegehalli M; Savitha, P; Basavaraju, Y. B.

doi:10.1016/j.vacuum.2020.109991

Cited by 11 publications

(8 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…By making a master stamp with a nanostructure to transfer concavity to the aluminum substrate, the surface of the patterned aluminum foil can be obtained; then, followed by anodization, AAO is formed with regular pores due to the effect of the electric field concentration. The other process is conducted by sputtering Al to a substrate material e.g., Si [124][125][126][127] (Section 2.3). This method can integrate AAO with different substrates for further application.…”

Section: Advancement Of Aao Template and Its Geometry At Low Temperat...mentioning

confidence: 99%

Advances in the Fabrication of Nanoporous Anodic Aluminum Oxide and Its Applications to Sensors: A Review

Ku,

Yu,

Hung

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

Nanoporous anodic aluminum oxide (AAO) is an important template for 1D nanomaterial synthesis. It is used as an etching template for nanopattern transfer in a variety of contexts, including nanostructured material synthesis, electrical sensors, optical sensors, photonic and electronic devices, photocatalysis, and hardness and anticorrosion improvement. In this review, we focus on various fabrication methods, pore geometry modification, and recent advances of AAO, as well as sensor applications linked to our environment, daily life, and safety. Pore geometry is concerned with the material composition, applied voltage mold, electrolyte type, temperature, and anodizing time during the fabrication of AAOs and for adjusting their pore size and profile. The applied voltage can be divided into four types: direct current anodization (DCA), reverse pulse anodization, pulse anodization (PA), and hybrid pulse anodization (HPA). Conventional AAOs are fabricated using DCA and mild anodization (MA) at a relatively low temperature (−5~15 °C) to reduce the Joule heating effect. Moreover, the issues of costly high-purity aluminum and a long processing time can be improved using HPA to diminish the Joule heating effect at relatively high temperatures of 20–30 °C with cheap low-purity (≤99%) aluminum. The AAO-based sensors discussed here are primarily divided into electrical sensors and optical sensors; the performance of both sensors is affected by the sensing material and pore geometry. The electrical sensor is usually used for humidity or gas measurement applications and has a thin metal film on the surface as an electrode. On the contrary, the AAO optical sensor is a well-known sensor for detecting various substances with four kinds of mechanisms: interference, photoluminescence, surface plasma resonance, and surface-enhanced Raman scattering (SERS). Especially for SERS mechanisms, AAO can be used either as a solid support for coating metal nanoparticles or a template for depositing the metal content through the nanopores to form the nanodots or nanowires for detecting substances. High-performance sensors will play a crucial role in our living environments and promote our quality of life in the future.

show abstract

Section: Advancement Of Aao Template and Its Geometry At Low Temperat...mentioning

confidence: 99%

Advances in the Fabrication of Nanoporous Anodic Aluminum Oxide and Its Applications to Sensors: A Review

Ku,

Yu,

Hung

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…В рамках першого підходу можна назвати наступні технологічні методи синтезу SiNWs : метало-стимульоване хімічне травлення (Metal Assisted Chemical Etching -MACE або MacEtch ) [33] та літографія з травленням (Lithography and Etching) [34]. В рамках другого підходу можна назвати наступні технологічні методи синтезу SiNWs : метод хімічного газофазного осадження (Chemical Vapor Deposition -CVD ) [35] та метод вирощування пара-рідина-тверде тіло (Vapor-Liquid-Solid -VLS growth ) [36].…”

Section: методи виготовлення та структурні особливості кремнієвих нан...unclassified

Sensors Based on Nanoscale Silicon 1D Structures for Industrial, Environmental and Medical Monitoring

Linevych

Koval

2022

Microsyst., Electron. & Acoust.

View full text Add to dashboard Cite

Article is devoted to the analysis of modern sensors based on silicon nanowires (SiNWs) to determine the influence of SiNWs synthesis parameters and their structural features on device characteristics. A modern trend in the development of electronic sensing devices is the use of various types of nanomaterials in order to increase sensor sensitivity and miniaturize of their size. 1D nanomaterials, namely SiNWs, have several advantages for sensor applications, such as a large surface-to-volume ratio and an increased rate of diffusion of the main charge carriers. Based on the literature analysis, an overview of modern SiNWs sensors was made. The advantages of silicon 1D structures were shown by comparison with other types of nanostructures. Also sensors were classified according to the methods of synthesis of SiNWs, sensor principle operation, kind of input value and types of applied modifiers. Silicon nanowires were most often synthesized by the method of metal-stimulated chemical etching, the advantages of which include the simplicity of implementation, low cost, and the ability to synthesize nanostructures with a high aspect ratio. The vapor-liquid-solid synthesis was also used, the advantages of which include the ability to be adapted to any technology of supplying a gas mixture with the target component and the possibility of obtaining nanowires with a diameter of 10 nm or less. According to the principle operation, the most of sensors developed on the basis of silicon nanowires are of electrical type (resistive, capacitive, electrochemical, diode or transistor type), optical sensors (fluorescent) are developed to a much lesser extent. Gas sensors (ethanol, oil vapor, formaldehyde, ammonia, nitrogen oxide, hydrogen, carbon dioxide,), liquid sensors (glucose, hydrogen peroxide, ethanol, heavy metal ions, pH), and physical values (humidity, temperature and illumination) have been developed on the basis of silicon 1D nanoscale structures. The following surface modifiers of nanowires were used to improve the performance characteristics: noble metal nanoparticles, metal-organic framework structures, carbon nanotubes, graphene, self-assembled monolayers, metal and metal oxide thin films. In particular, it was shown that the modification of the surface of the array of SiNWs with noble metals led to an increase in the sensitivity of the hydrogen sensor by 80%. Modification of formaldehyde sensor using reduced graphene oxide resulted in an improvement of sensor sensitivity by more than 2 times. The influence of SiNWs synthesis parameters on sensor performance characteristics was also determined. In particular, it was shown that increasing of SiNWs width from 20–30 nm to 500–600 nm led to an increase in the sensitivity of humidity sensor from 4.5 to 7.5%. Increasing the etching time caused the synthesis of longer nanowires, which improved the sensitivity of carbon dioxide sensors from 0.6 to 2.5%. Dependences established in this work will make it possible to develop the production technology of various types of sensors based on silicon nanowires with high sensitivity, selectivity, stability and operation speed.

show abstract

“…Though many strategies have been adopted to tailor successfully the size of the catalyst droplets in the VLS growth approach, such as electron beam lithography (EBL) catalyst patterning 43 and template assisted growth. 44 Recently, we also explored the use of EBL to pattern narrow stripes of indium (In) catalyst, with initial width down to 100 nm, and found that this size confinement is beneficial for forming uniform rows of In droplets. 45 However, all of these sophisticated catalyst formation technologies are not applicable for integration of electronics.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the size dispersion of the initial metallic catalyst droplets will be inherited and passed on to the as-grown SiNWs, and thus it has to be well-controlled for seeking a highly uniform and reliable fabrication (Figure b). Though many strategies have been adopted to tailor successfully the size of the catalyst droplets in the VLS growth approach, such as electron beam lithography (EBL) catalyst patterning and template assisted growth . Recently, we also explored the use of EBL to pattern narrow stripes of indium (In) catalyst, with initial width down to 100 nm, and found that this size confinement is beneficial for forming uniform rows of In droplets .…”

Section: Introductionmentioning

confidence: 99%

Deterministic Single-Row-Droplet Catalyst Formation for Uniform Growth Integration of High-Density Silicon Nanowires

Cheng,

Liu,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Planar silicon nanowires (SiNWs), grown by using low temperature catalytic approaches, are excellent 1D channel materials for developing highperformance logics and sensors. However, a deterministic position and size control of the metallic catalyst droplets, that lead to the growth of SiNWs, remains still a significant challenge for reliable device integration. In this work, we present a convenient but powerful edge-trimming catalyst formation strategy, which can help to produce a rather uniform single-row of indium (In) catalyst droplets of D cat = 67 ± 5 nm in diameter, with an exact one-droplet-on-one-step arrangement. This approach marks a significant achievement in self-assembled catalyst formation and offers a foundation to attain a reliable and scalable growth of density SiNW channels, via an inplane solid−liquid−solid (IPSLS) mechanism, with a uniform diameter down to D nw = 35 ± 4 nm, and do not rely on high-precision lithography techniques. Prototype SiNW-based field effect transistors (FETs) are also fabricated, with a high I on /I off current ratio and small subthreshold swing of >10 7 and 262 mV•dec −1 , respectively, indicating a reliable new routine to integrate a wide range of SiNW-based logic, sensor, and display applications.

show abstract

Advanced VLS growth of gold encrusted silicon nanowires Mediated by porous Aluminium Oxide template

Cited by 11 publications

References 49 publications

Advances in the Fabrication of Nanoporous Anodic Aluminum Oxide and Its Applications to Sensors: A Review

Advances in the Fabrication of Nanoporous Anodic Aluminum Oxide and Its Applications to Sensors: A Review

Sensors Based on Nanoscale Silicon 1D Structures for Industrial, Environmental and Medical Monitoring

Deterministic Single-Row-Droplet Catalyst Formation for Uniform Growth Integration of High-Density Silicon Nanowires

Contact Info

Product

Resources

About