Advanced technology of GaN based tunable violet laser with external cavity for holographic data storage

Mori, Nobuya; Dejima, Norihiro; Higashiura, A.; Omori, Masaki; Higuchi, Yu

doi:10.1117/12.2235336

Cited by 2 publications

(2 citation statements)

References 1 publication

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“…In comparison to solid-state and fiber-lasers, diode lasers are more compact and robust, less expensive, have higher efficiency, and easier to use as they do not require long warm-up times or consume large amounts of power (e.g., kilowatts) to operate. Semiconductor lasers with narrow linewidths are generally realized by utilizing internal feedback with distributed feedback lasers (DFBs) 1 or distributed Bragg reflector lasers (DBRs); 2 or with external feedback from a FP laser with a tunable diffraction grating (TG) 3 or hybrid external cavity lasers (HECL) with a volume bragg grating (VBG). 4,5 Each of these solutions offer unique advantages and disadvantages as shown in Table 1 below.…”

Section: Introductionmentioning

confidence: 99%

High-power single-frequency hybrid external cavity lasers with demonstrated narrow linewidth < 100 kHz

Mahat,

Petrov,

Carlin

et al. 2024

High-Power Diode Laser Technology XXII

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There is a need for high-power narrow-linewidth, small footprint, highly coherent diode lasers at various wavelengths (400-1800 nm) that can be utilized in many areas of photonics including fiber laser seeding, remote sensing, biomedical imaging, atomic clocks, quantum computing, THz spectroscopy, Raman spectroscopy, optical trapping, etc. Volume Bragg Grating (VBG) stabilized Fabry-Perot (FP) semiconductor lasers offer a versatile and robust platform for these applications. A Scanning Fabry-Perot Interferometer (FPI) is implemented for in-situ VBG alignment for these hybrid external cavity lasers (HECLs) in high volume production. Utilizing this method, it is possible to isolate a single longitudinal mode (SLM) of a single spatial mode semiconductor laser with very narrow linewidth. The typical laser linewidth during the production process is measured to be 0.01 nm with an Optical Spectrum Analyzer (OSA) and a few MHz with the FPI, both of which were limited by the resolution of the instrument. However, the actual linewidth of these high-power lasers (up to 450 mW fiber-coupled and 600 mW free space) are measured in final testing using the heterodyne beat note method. These measurements show that these VBG-locked single spatial mode FP lasers have Lorentzian linewidth of less than 100 kHz. The result of narrower laser linewidth is achieved due to the effect on the external cavity feedback and the increased cavity length. The linewidths of these wavelength stabilized lasers between 633 nm and 1064 nm are presented here and the input of the isolator, laser driver electronics and temperature controller on linewidth are studied and discussed as a function of optical power, laser temperature, and wavelength.

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Section: Introductionmentioning

confidence: 99%

High-power single-frequency hybrid external cavity lasers with demonstrated narrow linewidth < 100 kHz

Mahat,

Petrov,

Carlin

et al. 2024

High-Power Diode Laser Technology XXII

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“…So far, various optoelectronic devices based on GaN-based materials have been developed. For examples, GaN-based light sources from green to ultraviolet have been realized, and they have broad application potential in the fields of lighting, display, biomedicine, high-density data storage, and laser application [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity

et al. 2022

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In this paper, the behavior of exciton radiative recombination in a GaN-based triangular-like ridge cavity is studied at room-temperature. The triangular-like ridge cavity is fabricated on a standard-blue-LED epitaxial wafer grown on a sapphire substrate. Through the photoluminescence (PL) and time-resolved photoluminescence (TR-PL) measurements, a clear modulation of the original spontaneous emission is found in the microcavity, a new transition channel is observed, and the effect is angle-dependent. Furthermore, by changing the tilt angle during angle-resolution photoluminescence (AR-PL), it is found that the coupling between excitons and photons in the cavity is the strongest when tilted at 10°. By simulation, the strong localization of photons in the top of the cavity can be confirmed. The PL, TR-PL, and AR-PL results showed the sign of the exciton-photon coupling in the triangular-like ridge cavity.

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Advanced technology of GaN based tunable violet laser with external cavity for holographic data storage

Cited by 2 publications

References 1 publication

High-power single-frequency hybrid external cavity lasers with demonstrated narrow linewidth < 100 kHz

High-power single-frequency hybrid external cavity lasers with demonstrated narrow linewidth < 100 kHz

The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity

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