Abstract:As technology scales down, the density of Static Random Access Memory (SRAM) devices increases drastically, and their storage capacity grows at the same time. Moreover, SRAMs become more prone to physical defects in each technology node. In addition, resistive defects and parametric defects are increasing which are hard to detect by the conventional test. Thus, the need of effective tests with high fault coverage and low cost increases. In this work, we study the reuse of assist technique (read and write assis… Show more
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