Advanced Physical Design in Nanoscale Analog CMOS

Lewyn, L.L.

doi:10.1007/978-94-007-0391-9_3

Cited by 8 publications

(11 citation statements)

References 8 publications

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“…It is mainly divided into pre-amplifier and dynamic latch. By cascading multiple pre-amplifier stages, the speed of the proposed COMP can be effectively improved at the cost of static power [21]. The pre-amplifier stages can isolate the kick back noise, thus reducing the interference to the signal source.…”

Section: The Compmentioning

confidence: 99%

Flexible and fully integrated 4-bit SAR ADC using metal-oxide TFTs

Chen,

Mei,

et al. 2024

Flex. Print. Electron.

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This paper presents a flexible fully integrated 4-bit successive approximation register (SAR) Analog-to-Digital converter (ADC), which is fabricated by unipolar n-type indium-zinc-oxide thin-film transistors. A bootstrap switch and a comparator with a pre-amplifier are proposed and employed to realize the SAR ADC. The fabricated SAR ADC achieves a sampling rate of up to 20 kHz and a peak signal-to-noise and distortion ratio (SNDR) of 22.9 dB, corresponding to an effective-number-of-bits (ENOB) of 3.52 bits. The static performance of −0.58/+0.37 LSB DNL and −0.49/+0.39 LSB INL is achieved.

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Section: The Compmentioning

confidence: 99%

Flexible and fully integrated 4-bit SAR ADC using metal-oxide TFTs

Chen,

Mei,

et al. 2024

Flex. Print. Electron.

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“…However, when the bandwidth of the DAC is finite, that means the modulation voltage V and the modulation phase ϕ deviate from their true values where LG represents the loop gain of an operational amplifier in the DAC, which is proportional to the gain bandwidth of the operational amplifier [34]. In this case, the actual values ϕ ′ will differ from the expected value ϕ.…”

Section: By Calculating the Expectation Of P A P B And P ′′mentioning

confidence: 99%

Imperfect basis choice in continuous-variable quantum key distribution

Liu

Peng

et al. 2020

Laser Phys. Lett.

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In the Gaussian-modulated coherent states (GMCS) quantum key distribution (QKD), basis choice is a necessary procedure if homodyne detector is used. However, finite bandwidth of the digital-to-analog convertor (DAC) at the receiver's side may lead to the imperfection of the basis choice, namely, maybe Bob can not exactly modulate 0 or π 2 on the phase modulator to implement the homodyne detection.We investigate the GMCS QKD scheme with imperfect basis choice under realistic conditions of quantum channel and detector.We show that the imperfection causes a misestimate of the transmittance and the excess noise, the secret key rate and the security of the system are dramatically decreased consequently. To achieve a reliable quantum key distribution, a security bound to the noise induced by the imperfect basis choice is derived for reverse reconciliation and homodyne detector. Besides, we propose and demonstrate a countermeasure against the noise due to imperfect basis choice.

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“…Circuit diagram of cascode amplifier using III-V-on insulator MOS transistor shown in figure 8(a). A general expression for low-frequency gain of the amplifier is given by [36]:…”

Section: Circuit Performancementioning

confidence: 99%

Device-circuit analysis of ultra-thin body In_1−xGa_xAs on insulator MOS transistor with varying indium mole fraction and channel thickness

Maity

Pandit

2022

Eng. Res. Express

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In this paper, with the help of a well-calibrated simulation study, we explore the design space of ultra-thin body In1−xGaxAs-on-Insulator MOS transistor. We have studied the effect of Indium content, and channel thickness on carrier mobility, different analog figure of merits such as transconductance, transconductance generation factor, output conductance, and intrinsic gain of UTB III-V on Insulator MOS transistor. Moreover, we have analyzed the RF performance of the device in terms of unity gain cut-off frequency and maximum oscillation frequency. To verify frequency response characteristics and DC transfer characteristics, the circuit implementation of the UTB III-V on Insulator MOS transistor was performed on a cascode amplifier and differential amplifier. Our result shows that while increasing channel thickness and Indium content, the carrier transport property of the device improves. With an increase in channel thickness and Indium content, a significant improvement in carrier mobility is observed. Due to the poor electrostatic integrity, off-state current of the device increases with channel thickness and Indium content. Due to enhanced transport property, drain current, transconductance, unity gain cut-off frequency, and maximum oscillation frequency also improve. The improvement in analog and RF Figure of Merits are also reflected in circuit performance.

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Advanced Physical Design in Nanoscale Analog CMOS

Cited by 8 publications

References 8 publications

Flexible and fully integrated 4-bit SAR ADC using metal-oxide TFTs

Flexible and fully integrated 4-bit SAR ADC using metal-oxide TFTs

Imperfect basis choice in continuous-variable quantum key distribution

Device-circuit analysis of ultra-thin body In_1−xGa_xAs on insulator MOS transistor with varying indium mole fraction and channel thickness

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Advanced Physical Design in Nanoscale Analog CMOS

Cited by 8 publications

References 8 publications

Flexible and fully integrated 4-bit SAR ADC using metal-oxide TFTs

Flexible and fully integrated 4-bit SAR ADC using metal-oxide TFTs

Imperfect basis choice in continuous-variable quantum key distribution

Device-circuit analysis of ultra-thin body In1−x Ga x As on insulator MOS transistor with varying indium mole fraction and channel thickness

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Product

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Device-circuit analysis of ultra-thin body In_1−xGa_xAs on insulator MOS transistor with varying indium mole fraction and channel thickness