Advanced modulation response analysis of high-speed VCSELs

Hamad, Wissam; Sanayeh, Marwan Bou; Hamad, Mustapha; Hofmann, Werner

doi:10.1117/12.2501216

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…Although the theoretical model is the same equivalent circuit model [14,21], the extracted parameters were determined by the fit method. In [15][16][17], the approach of extracting data using a first-order low-pass filter transfer function, which is the simplest circuit model that contains only C a , R a , and R m , is oversimplified.…”

Section: Parasitic Extraction Methodsmentioning

confidence: 99%

“…The junction capacitance C j is the sum of the depletion capacitance and diffusion capacitance; however, under normal forward bias conditions, C j is dominated by the diffusion capacitance. C intrinsic , C oxide , and C j are grouped together as [21]: The values of the electrical components in the equivalent circuit model were obtained by fitting the measured reflection coefficient S 11 (f ), which can be expressed as [15,22]:…”

Section: Equivalent Circuit Modelmentioning

confidence: 99%

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Parasitic Parameters Extraction of High-Speed Vertical-Cavity Surface-Emitting Lasers

et al. 2022

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Parasitic parameters, including electrical capacity and inductance, are the key limiting factors for bandwidth improvement of high-speed vertical-cavity surface-emitting lasers (VCSELs). The traditional parasitic extraction method, which uses a first-order low-pass filter transfer function, is oversimplified, and there are large deviations between the obtained data and the actual measured data. In this paper, we proposed a modified parasitic extraction method that described the extrinsic behaviour of the high-speed oxide-confined VCSELs well and easily extracted the values of all parasitic parameters. This method can also precisely fit microwave reflection coefficient S11 data even at high frequencies and provide design guidance for high-speed VCSELs. Using this method, a high-speed 850 nm VCSEL featuring a six-layer oxide aperture with −3 dB bandwidth up to 23.3 GHz was analysed. The electrical parasitics have been systematically extracted from VCSELs with different oxide apertures. The enhanced bandwidth based on the improvement of parasitic parameters was discussed. It was found that the critical parasitic factors that affect the −3 dB bandwidth of VCSELs are pad capacitance and inductance.

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Section: Parasitic Extraction Methodsmentioning

confidence: 99%

Section: Equivalent Circuit Modelmentioning

confidence: 99%

Parasitic Parameters Extraction of High-Speed Vertical-Cavity Surface-Emitting Lasers

et al. 2022

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Enhanced high-frequency modulation of single-mode 850nm VCSELs via dual transverse-cavity integration

Ibrahim,

Hassan,

et al. 2024

IEICE Electron. Express

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This paper introduces an innovative design for double-transversecoupled-cavity (DTCC) VCSELs aimed at achieving high-speed modulations exceeding 21GHz with single mode operations. The lateral inplane optical feedback across both cavities facilitates a significant enhancement in direct modulation bandwidths. Open eye diagrams were discerned for data rates as high as 36 Gbps (NRZ) and 48Gbps (PAM4).

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Advanced modulation response analysis of high-speed VCSELs

Cited by 2 publications

References 7 publications

Parasitic Parameters Extraction of High-Speed Vertical-Cavity Surface-Emitting Lasers

Parasitic Parameters Extraction of High-Speed Vertical-Cavity Surface-Emitting Lasers

Enhanced high-frequency modulation of single-mode 850nm VCSELs via dual transverse-cavity integration

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