Advanced Memristor Model With a Modified Biolek Window and a Voltage-Dependent Variable Exponent

Mladenov, Valeri; Kirilov, Stoyan

doi:10.5604/01.3001.0012.0697

Cited by 6 publications

(39 citation statements)

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“…Two of them use the standard Joglekar [5] and Biolek [6] window functions, respectively. The other two models use modified Joglekar and Biolek window functions [25].…”

Section: A Brief Overview Of the Applied Memristor Mathematical Modelsmentioning

confidence: 99%

“…The nonlinearity of the dopant motion starts from local heating in a group of specific material media, or from high electric fields [1,2,18,20]. In the present investigation, several different window functions are used [5,6,25]. They are briefly discussed below.…”

Section: A Brief Overview Of the Applied Memristor Mathematical Modelsmentioning

confidence: 99%

“…This model is applied in the present research after adjustment according to the experimental i-v characteristic of HfO 2 memristors [8]. The memristor memory technology and the associated in-memory computing are promising ones, which could potentially replace conventional memory and computational circuits [22][23][24][25]. Memristors are used in memories as a storing element [24,26,27].…”

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confidence: 99%

“…A comparison to experimental data [8] and between the results from different models will also be made. The ability of the model [20,21], together with the modified window function [25], for realistic representation of the performance of complex memristor devices will be established.The paper is organized as follows. A short description of several mathematical memristor models applied for the analysis of memory fragments and their adjustment according to experimental the HfO 2 -memristor i-v relationship are presented in Section 2.…”

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confidence: 99%

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Analysis of Memory Matrices with HfO2 Memristors in a PSpice Environment

Mladenov

2019

Electronics

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The investigation of new memory circuits is very important for the development of future generations' non-volatile and Random Access Memories (RAM) memories and modern schemes for in-memory calculations. The purpose of the present research is to propose a detailed analysis of passive and hybrid memristor-based memory crossbars with separating metal oxide semiconductor (MOS) transistors. The considered memristors are based on HfO 2 . The transistors are applied to eliminate the parasitic paths in the schemes. For simulations, a previously proposed strongly nonlinear modified window function by the author together with a physical nonlinear memristor model is used. The considered model is adjusted according to the experimental i-v relationship of HfO 2 memristors. The i-v relationship obtained by the simulation is successfully fitted to the respective relationship derived by physical measurements. A good coincidence between these characteristics is established. Several basic window functions are also applied for comparison to the corresponding results. The proposed model is analyzed in Personal Simulation Program with Integrated Circuit Emphasis (PSpice) and it is also used for simulation of a 5 × 5 fragment of a memristor memory crossbar with isolating transistors and for the analysis of a 6 × 6 passive memory matrix. The investigated matrices are simulated for writing, reading, and erasing information. It is established that the model proposed could be used for simulations of complex memristor circuits.In-memory computing with memristors is a very important and valuable technique for future generation's memories and computational circuits [13][14][15]. This paper and a previous one written by the author [16] are associated with in-memory calculation circuits and memory devices based on memristors. The previous paper [16] considers an analysis of the crossbar with four transistors and four resistance-switching memory elements 4T4R matrix with TiO 2 memristors in MATrix Laboratory (MATLAB). The present research is an attempt to analyze memristor crossbars (10T25R) with different types of memristors-HfO 2 -based memory elements, which are modern and important for new engineering applications. This investigation is realized in the PSpice environment by applying different memristor models. An additional comparison between the applied parameters is made. The first physical memristor was created in the Hewlett Packard (HP) research laboratories by Williams's scientific team in 2008 [4]. A number of papers related to memristors and memristive devices have been published and many models have been proposed [5][6][7]9]. The linear dopant drift model [4] is applied for low-level signals. The nonlinear models proposed by Biolek [6] and Joglekar [5] are able to illustrate nonlinear memristor performance for high-level signals and low frequencies according to the state variable [9]. The Pickett model [17] is based on physical measurements, and on the mechanism of the current flow through a tunnel barrier. It has maximal correctn...

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“…Two of them use the standard Joglekar [5] and Biolek [6] window functions, respectively. The other two models use modified Joglekar and Biolek window functions [25].…”

Section: A Brief Overview Of the Applied Memristor Mathematical Modelsmentioning

confidence: 99%