Abstract:We explore CdTe fractional monolayer quantum dots (QDs) in a ZnCdSe host matrix for potential application in an intermediate band solar cell device. Careful consideration has been taken during the initiation of the growth process of QDs by migration enhanced epitaxy, in order to avoid the formation of undesirable interfacial layers that can form due to the lack of common anion between the two materials. A superlattice structure of 100 periods of alternating QD and spacer layers is analyzed by high resolution X… Show more
An intermediate band solar cell (IBSC) device based on type-II CdTe/ZnCdSe sub-monolayer quantum dots is presented. I-V and two step photon measurements are compared to a reference solar cell and show improved properties for the IBSCs.
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